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Autor:
F. Abbate, E Baylac, Clement Pribat, D. Barge, Marc Juhel, C. Gaumer, A. Pofelski, Vincent Mazzocchi, Germain Serventon, Olivier Gourhant, Francois Andrieu, Maud Bidaud
Publikováno v:
ECS Transactions. 64:469-478
High mobility channels are considered as an interesting path to increase PMOS performances for advanced CMOS technology. Silicon-Germanium On Insulator (SGOI) benefits from both the advantage of the SiGe material (hole mobility booster) and the On In