Double Ion Implantation and Pulsed Laser Melting Processes for Third Generation Solar Cells

Autor: Eric García-Hemme, Rodrigo García-Hernansanz, Javier Olea, David Pastor, Álvaro del Prado, Ignacio Mártil, Perla Wahnón, Kefrén Sanchez, Pablo Palacios, Germán González-Díaz

Publikováno v: International Journal of Photoenergy, Vol 2013 (2013)

In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based

Externí odkaz: https://doaj.org/article/1869e31cc0d34944bffcabd8766f0785

A robust method to determine the contact resistance using the van der Pauw set up

Autor: E. San Andrés, E. García-Hemme, A. del Prado, Ignacio Mártil, David Pastor, R. García-Hernansanz, D. Montero, Germán González-Díaz, Javier Olea

Publikováno v: E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
E-Prints Complutense. Archivo Institucional de la UCM
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The van der Pauw method to calculate the sheet resistance and the mobility of a semiconductor is a pervasive technique both in the microelectronics industry and in the condensed matter science field. There are hundreds of papers dealing with the infl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5202969ee5c298cb8b4e77e4f0c6d21b
https://doi.org/10.1016/j.measurement.2016.11.040

Energy levels of defects created in silicon supersaturated with transition metals

Autor: Germán González-Díaz, Héctor García, E. García-Hemme, Helena Castán, R. García-Hernansaz, Salvador Dueñas, D. Montero

Publikováno v: UVaDOC: Repositorio Documental de la Universidad de Valladolid
Universidad de Valladolid
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname

Producción Científica
Intermediate-band semiconductors have attracted much attention for use in silicon-based solar cells and infrared detectors. In this work, n-Si substrates have been implanted with very high doses (1013 cm−2 and 1014 cm�

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::96b9476c5601b1aa05c988eb7bf20384
http://uvadoc.uva.es/handle/10324/45398

Study of the electrical behavior in Intermediate Band-Si junctions

Autor: R. García-Hernansanz, Javier Olea, Ignacio Mártil, A. del Prado, David Pastor, E. García-Hemme, L. González-Pariente, Germán González-Díaz

Publikováno v: Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids | Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids | 25/11/2012-30/11/2012 | Boston (MA), EEUU
Archivo Digital UPM
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In this study we analyze the electrical behavior of a junction formed by an ultraheavily Ti implanted Si layer processed by a Pulsed Laser Melting (PLM) and the non implanted Si substrate. This electrical behavior exhibits an electrical decoupling ef

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::347b45aa9d6c1e82f3c4231d5c99b6e1
https://doi.org/10.1557/opl.2013.224

Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

Autor: A. del Prado, Javier Olea, Antonio Martí, Elisa Antolin, Esther López, David Pastor, E. García-Hemme, Germán González-Díaz, R. García-Hernansanz, Antonio Luque

Publikováno v: E-Prints Complutense. Archivo Institucional de la UCM
instname
Journal of Physics D: Applied Physics, ISSN 0022-3727, 2016-01, Vol. 49, No. 5
Archivo Digital UPM
Universidad Politécnica de Madrid
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid

Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15–300 K range and the room temperature spectral photoresponse at energies over the ban

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::57b00c680425f74fb53ca7f972e3cbf2