Zobrazeno 1 - 10
of 188
pro vyhledávání: '"Gerhard Wachutka"'
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract In this study ion‐implanted lateral 4H‐SiC pin diodes are reported, which show an unexpectedly high room temperature in‐plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying tr
Externí odkaz:
https://doaj.org/article/05008ca9d92d48b58e98a78a0936ceb2
Autor:
Gerhard Wachutka
Publikováno v:
2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
Publikováno v:
IEEE Transactions on Electron Devices. 67:5653-5661
In this article, we introduce the novel concept of capacitively coupled measuring contacts (CCMCs) for microscaled vertical Hall sensors. Using dedicated numerical simulations, we show how this concept results in shaping and consequent focusing of th
Publikováno v:
Materials Science Forum. 1004:1088-1096
This work aims at extending the predictive simulation technique for cosmic ray-induced failure analysis from Si PiN diodes [1] to SiC PiN diodes. Accurate 3D cylindrical-symmetric transient simulations were performed with a minimum mesh size of 20nm
Temperature Dependence of the Bipolar Activation and the Leakage Currents of 10 kV 4H-SiC JBS-Diodes
Publikováno v:
Materials Science Forum. 1004:953-959
The activation of bipolar conduction was investigated for two 4H-SiC 10 kV JBS-diodes which differ in the area ratio between p-doped and n-doped regions (Ws/WPin). Quasi-static measurements at low electric current densities (j < 2.5 Acm-2) were perfo
Publikováno v:
Materials Science Forum. 963:553-557
The wide band gap of SiC semiconductor devices constitutes a serious challenge to build good Ohmic contacts on the surface of the p-type material. This is reflected in the numerical analysis of ”realistic” devices, where we have to cope with seri
Autor:
Gerhard Wachutka, Hesham Okeil
Publikováno v:
IEEE Magnetics Letters. 10:1-5
We report on the design and simulation of a novel vertical Hall sensor, which exhibits highly nonlinear characteristics between Hall voltage and bias voltage, featuring a region of large negative differential sensitivity. Based on these features, nov
Autor:
Hesham Okeil, Gerhard Wachutka
Publikováno v:
IEEE Transactions on Magnetics. 55:1-4
We compare alternative concepts of magnetic field sensors, which are capable of working under very high and even extreme temperature conditions, and outline their respective principal technological and physical limitations. We review basic work done
Publikováno v:
ISPS'21 Proceedings.
Publikováno v:
Microelectronics Reliability. :97-101
Latent defects were provoked in SMD capacitors by short TLP current pulses. Simultaneously the transient evolution of the device's charge was extracted to generate its Q(V) characteristics and to determine its capacitive behaviour during the transien