Power Trench MOSFETs with very low specific on-resistance for 25V applications

Autor: R. van Dalen, P. Goarin, C. Le Cam, Gerhard Koops

Publikováno v: Solid-State Electronics. 51:1589-1595

In this paper, an investigation of the benefits of deep ultra violet lithography for the manufacturing of Trench MOSFETs and its impact on device performance is presented. We discuss experimental results for devices with a pitch size down to 0.6 μm

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6540d8fa7ce86c1ca824a4fc04c5efd0
https://doi.org/10.1016/j.sse.2007.09.035

Integrated heat sinks for SOI power devices

Autor: Peter G. Steeneken, Anco Heringa, Radu Surdeanu, Liang Yan, Luc Van Dijk, Gerhard Koops

Publikováno v: 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Silicon on insulator (SOI) technology for power devices offers many distinct advantages compared to bulk Si technology, however in high power applications the buried oxide (BOX) layer can impede heat transport towards the backside of the silicon subs

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bb6c2c33a5b04eb5def62d540fd796ae
https://doi.org/10.1109/ispsd.2013.6694465

Comparison of electrical techniques for temperature evaluation in power MOS transistors

Autor: Jurriaan Schmitz, Radu Surdeanu, Raymond J. E. Hueting, B. K. Boksteen, Maarten Jacobus Swanenberg, Gerhard Koops, Anco Heringa, Andries J. Scholten, Peter G. Steeneken, K. Reimann, Liang Yan, A. Ferrara

Publikováno v: IEEE International Conference on Microelectronic Test Structures (ICMTS 2013), 115-120
STARTPAGE=115;ENDPAGE=120;TITLE=IEEE International Conference on Microelectronic Test Structures (ICMTS 2013)

Three electrical techniques (pulsed-gate, AC-conductance and sense-diode) for temperature evaluation in power MOS transistors have been experimentally compared on the same device. The device under test is a silicon-on-insulator (SOI) laterally-diffus

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1ae8bd8bc7d6a9ec24130a3a13f86e6
https://doi.org/10.1109/icmts.2013.6528156

Extraction of the Electric Field in Field Plate Assisted RESURF Devices

Autor: B. K. Boksteen, Gerhard Koops, Raymond J. E. Hueting, Anco Heringa, S. Dhar

Publikováno v: Proceedings of 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2012), 145-148
STARTPAGE=145;ENDPAGE=148;TITLE=Proceedings of 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2012)

It has previously been reported that the lateral electric field (E x ) in the drain extension of thin SOI HV (700V) field plate assisted RESURF devices can be extracted from their I D -V D characteristics in the subthreshold regime. In this work the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cca54606c6850b328f5caadf4e3c1234
https://research.utwente.nl/en/publications/96bfaf88-0d03-47f1-95bd-6796efd82fd8

56 MHZ piezoresistive micromechanical oscillator

Autor: K.L. Phan, A. Murroni, G. J. A. M. Verheijden, J. van Wingerden, Peter Baltus, J.T.M. van Beek, P. Vermeeren, Gerhard Koops, J. J. M. Bontemps, J.J. Koning, C. van der Avoort, J. A. T. M. van den Homberg, H.C.W. Beijerinck

Publikováno v: TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference.

A fully functional oscillator has been developed, based on a resonator with an electrostatic-to-piezoresistive transduction. Both resonator and amplifier IC have been processed on a SOI wafer with identical SOI layer thickness of 1.5 μm. The resonat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ecbf58ea2a4946c71615ce7daab5dd4e
https://doi.org/10.1109/sensor.2009.5285812