Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Gerhard Bast"'
Autor:
C. Lorant, John Newby, Gerhard Bast, Fabian Wilbers, Vignesh Sundar, Frank Holsteyns, Kay Wendt, Jochen Ruth
Publikováno v:
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
The continued drive in the semiconductor industry for smaller, faster and cheaper integrated circuits has driven the industry to the 10nm technology node and beyond and ushered in a new era of high-performance 3-dimensional transistor structures. Con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad09c94ee598a077a9dbc8e1bb9af4e6
https://doi.org/10.1109/asmc.2018.8373202
https://doi.org/10.1109/asmc.2018.8373202
Autor:
Karine Kenis, Sathish Kumar Dhayalan, Frank Holsteyns, Kurt Wostyn, Gavin Simpson, Karthik Swaminathan, Paul Mertens, Gerhard Bast, Dirk Rondas, Stefan De Gendt, Roger Loo, Bastien Douhard, Andriy Hikavyy
Publikováno v:
ECS Transactions. 64:989-995
Inline light scattering measurements are frequently used to determine wafer quality and cleanliness. In this paper we will show how this technique can be extended to determine the crystalline quality after hetero-epitaxy. Misfits on the surface of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62b535d3b2a4225457a7c92118121637
https://doi.org/10.1149/06406.0989ecst
https://doi.org/10.1149/06406.0989ecst
Autor:
Sandip Halder, Gavin Simpson, Matty Caymax, Neli Ulea, Philippe Leray, Andreas Schulze, Gerhard Bast, Marco Polli
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
The objective of this paper is to elucidate novel applications where the low frequency component of a background signal (haze) level of a wafer inspection tool can be used to qualitatively analyze different epitaxial processes. During initial epitaxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09355fe2350b448dce211fd8ade23f3f
https://doi.org/10.1109/asmc.2015.7164442
https://doi.org/10.1109/asmc.2015.7164442
Autor:
Milko Peikert, Marco Polli, Sandip Halder, Matty Caymax, Gerhard Bast, Neli Ulea, Yves Mols, E. Vancoille, Seong Ho Yoo, Nancy Nieuborg, Jan Van Puymbroeck, Gavin Simpson, Dieter Van den Heuvel
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
The purpose of this paper is to elucidate other applications where the low frequency component of background signal (haze) level of a wafer inspection tool can be used to qualitatively analyze different processes. During initial epitaxial development
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94b8c2fd42ef87b0b198adb2700ce1fa
https://doi.org/10.1109/asmc.2014.6847022
https://doi.org/10.1109/asmc.2014.6847022
Autor:
Victor Aristov, Gerhard Bast, Walter Schwarzenbach, Alexander Belyaev, Cecile Moulin, Roland Brun
Publikováno v:
2012 SEMI Advanced Semiconductor Manufacturing Conference.
This paper will explain the challenges and solutions for ultra thin SOI inspection using a laser light scattering based system. The impact of reflectivity on haze, sizing and minimum threshold will be detailed. We will show how the required sensitivi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6550801044992677c4bd3676f7752d2d
https://doi.org/10.1109/asmc.2012.6212870
https://doi.org/10.1109/asmc.2012.6212870
Publikováno v:
2010 IEEE International SOI Conference (SOI).
It is well known that the final surface roughness of SOI wafers has to be controlled to a very tight tolerance in order to maintain transistor parameters required for today's advanced node semiconductor devices. The traditional method for this measur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c2c6745b86fecb03aa6285fe8d0468f
https://doi.org/10.1109/soi.2010.5641056
https://doi.org/10.1109/soi.2010.5641056