Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Gerardo Malavena"'
Autor:
Gerardo Malavena, Salvatore M. Amoroso, Andrew R. Brown, Plamen Asenov, Xi-Wei Lin, Victor Moroz, Mattia Giulianini, David Refaldi, Christian Monzio Compagnoni, Alessandro S. Spinelli
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 651-657 (2024)
In this two-part article we discuss the difference between a continuous and a discrete approach to trap modeling in the simulation of 3-D NAND Flash memories with polysilicon channel. In Part I we focus on threshold voltage $({\mathrm { V}}_{\mathrm
Externí odkaz:
https://doaj.org/article/b7afce161e184ff092a9374d9c9526b5
Autor:
Gerardo Malavena, Salvatore M. Amoroso, Andrew R. Brown, Plamen Asenov, Xi-Wei Lin, Victor Moroz, Mattia Giulianini, David Refaldi, Christian Monzio Compagnoni, Alessandro S. Spinelli
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 658-661 (2024)
In Part II of this article we discuss the impact of a discrete treatment of traps on 3-D NAND Flash random telegraph noise (RTN). A higher RTN results when discrete traps are taken into account, that can only be explained by a stronger influence of t
Externí odkaz:
https://doaj.org/article/09c859b81e254e71b8dbdeb8f936cf18
Autor:
Gerardo Malavena, Mattia Giulianini, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 524-530 (2023)
In this paper, we present a detailed experimental investigation of high-temperature data retention in 3D floating-gate NAND Flash memory arrays. Data reveal that charge detrapping from the cell tunnel oxide and depassivation of traps in the string po
Externí odkaz:
https://doaj.org/article/6397aec38f21473f9cfd0251938db086
Publikováno v:
Micromachines, Vol 12, Iss 6, p 703 (2021)
In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the
Externí odkaz:
https://doaj.org/article/1a52761118bf4b49be981a8732d7517a
Publikováno v:
Materials, Vol 13, Iss 1, p 166 (2020)
Neuromorphic computing has emerged as one of the most promising paradigms to overcome the limitations of von Neumann architecture of conventional digital processors. The aim of neuromorphic computing is to faithfully reproduce the computing processes
Externí odkaz:
https://doaj.org/article/7eece1699fc04bc499a0cba315e5f226
Autor:
Mattia Giulianini, Gerardo Malavena, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Gerardo Malavena, Mattia Giulianini, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni
Publikováno v:
IEEE Electron Device Letters. 43:557-560
Autor:
Gerardo Malavena, Mattia Giulianini, Christian Monzio Compagnoni, Luca Chiavarone, Alessandro S. Spinelli
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Publikováno v:
Springer Handbook of Semiconductor Devices ISBN: 9783030798260
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c975ce71c5091ed0d1cc4f79fb7e279
https://doi.org/10.1007/978-3-030-79827-7_32
https://doi.org/10.1007/978-3-030-79827-7_32
Autor:
Gerardo Malavena
Publikováno v:
Special Topics in Information Technology ISBN: 9783030859176
Since the very first introduction of three-dimensional (3–D) vertical-channel (VC) NAND Flash memory arrays, gate-induced drain leakage (GIDL) current has been suggested as a solution to increase the string channel potential to trigger the erase op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de3f4f9f95f8ca9de9173537e26064d2
https://doi.org/10.1007/978-3-030-85918-3_4
https://doi.org/10.1007/978-3-030-85918-3_4