Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Gerardo Bottiglieri"'
Autor:
Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Eelco van Setten, Claire van Lare, Tim Brunner, Mark van de Kerkhof, Andreas Erdmann
Publikováno v:
Optical and EUV Nanolithography XXXV.
Autor:
Eelco van Setten, Gerardo Bottiglieri, Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Claire van Lare, Mark van de Kerkhof, Tim Brunner
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2021.
We employ the hybrid mask model of the Fraunhofer IISB simulator Dr.LiTHO to investigate the role of the absorber and multilayer for the observed image blur and contrast loss mechanisms. Hybrid mask model decomposes the EUV mask into the absorber and
Autor:
Bartosz Bilski, Anton van Oosten, Paul Graeupner, Jan van Schoot, Claire van Lare, Joerg Zimmermann, Eelco van Setten, Friso Wittebrood, Jo Finders, Natalia Davydova, Gerardo Bottiglieri, John McNamara, Gijsbert Rispens
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2021.
To enable cost-effective shrink of future devices, a new High-NA EUV platform is being developed. The High-NA EUV scanner employs a novel POB design concept with 0.55NA that enables 8nm HP resolution and a high throughput. In this paper we will discu
Autor:
Timothy A. Brunner, Jara Garcia Santaclara, Christopher N. Anderson, Patrick P. Naulleau, Gerardo Bottiglieri
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XII.
We have used the MET5 exposure system using “dark field” lithography, where a small σ=0.1 source is wholly contained in the 30% Central Obscuration of the 0.5NA mirror optics. One goal of this paper is to quantify and explain the superior image
Autor:
Claire van Lare, Gerardo Bottiglieri, Peter Evanschitzky, Andreas Erdmann, Hazem Mesilhy, Eelco van Setten
Background: Explaining imaging phenomena in EUV lithography requires more than a single point of view. Traditionally, the diffraction characteristics of EUV masks are analyzed in terms of the amplitude and phase of diffraction orders that are generat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b953ee099f6a6afaf370d999df638968
https://publica.fraunhofer.de/handle/publica/270920
https://publica.fraunhofer.de/handle/publica/270920
Autor:
Frank Timmermans, Meng Lee, Eelco van Setten, Gerardo Bottiglieri, Tim Brunner, Andreas Erdmann, Hazem Mesilhy, Katrina Rook
Publikováno v:
Extreme Ultraviolet Lithography 2020.
Today’s EUV masks are optimized for maximum reflectivity at 6o angle of incidence to support imaging on the 0.33NA scanners. The High-NA EUV scanner will have an NA of 0.55 and anamorphic optics, as right balance between productivity and keeping th
Autor:
Anton van Oosten, Timon Fliervoet, Eelco van Setten, Joern-Holger Franke, Gerardo Bottiglieri, Rene Carpaij, Dong-Seok Nam, Fei Liu, Natalia Davydova, Vincent Wiaux, Joseph Zekry, John McNamara, Patrick P. Naulleau, Markus P. Benk, Ken Goldberg
Publikováno v:
Extreme Ultraviolet Lithography 2020.
The next-generation high-NA EUV scanner is being developed to enable patterning beyond the 3-nm technology node. Design and development of the scanner are based on rigorous litho-simulations. It is important to verify key imaging simulation findings
Autor:
Timon Fliervoet, Gerardo Bottiglieri, Peter Evanschitzky, Andreas Erdmann, Hazem Mesilhy, E. van Setten
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
Mitigation of 3D-mask effects is a requirement for pushing high-NA (0.55) EUV lithography to its limits. Both the absorber and the reflective multilayer parts of the EUV mask contribute to the 3D-mask effects. This paper focuses on the investigation
Autor:
Andreas Erdmann, Lokesh Devaraj, Gijsbert Rispens, Michiel Kupers, Gerardo Bottiglieri, Par Broman, Twan van den Hoogenhoff, Felix Wahlisch
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2019.
The EUV pellicle is a thin membrane intended to shield the reticle from particles. Any particles on the pellicle will be out of focus but large particles can still locally influence pattern formation. This work experimentally determines the local ima
Autor:
Lokesh Devaraj, Felix Wahlisch, Eelco van Setten, Timon Fliervoet, Gerardo Bottiglieri, Andreas Erdmann, Michiel Kupers
Publikováno v:
35th European Mask and Lithography Conference (EMLC 2019).
Defectivity in EUV scanners gains much more importance as they move towards the high-volume manufacturing. The reticle (mask) needs to be protected from particle contamination, both inside and outside the scanner environment. One widely used method t