Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Gerard Pataut"'
Autor:
Frédéric Verdier, Nathalie Malbert, Andre Touboul, Benoit Lambert, R. Bonnet, Nathalie Labat, Gerard Pataut, Pierre Huguet
Publikováno v:
Microelectronics Reliability. 41:1573-1578
Autor:
Jean-Claude Clement, Nathalie Malbert, Gerard Pataut, Dominique Carisetti, Michel Bonnet, Moshine Bouya, Nathalie Labat, Philippe Perdu
This paper presents a new method of passivation control by electroluminescence (EL) in 0.15 μm AlGaN/GaN HEMT. The electroluminescence signature in one finger HEMTs (W = 1 × 100 μm), and eight fingers ones (W = 8 × 125 μm), is modified by defect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d0ebf29b3d0922fbb8198bc82309533
https://hal.archives-ouvertes.fr/hal-00197479
https://hal.archives-ouvertes.fr/hal-00197479
Autor:
Frédéric Verdier, Gerard Pataut, Nathalie Labat, Benoit Lambert, Andre Touboul, Nathalie Malbert, Pierre Huguet
Publikováno v:
Noise in Physical Systems and 1/F Fluctuations.
Autor:
Gerard Pataut, Dimitris Pavlidis
Publikováno v:
International Journal of Electronics. 64:731-751
The design, fabrication and performance of X-band varactor-tuned monolithic GaAs FET oscillators is described. The design is based on small and large signal device characteristics. A manufacturable process is used in order to realize the oscillators.