Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Gerard Dang"'
Autor:
Daniel Shreiber, M.W. Cole, M. Ivill, Grace D. Metcalfe, Gerard Dang, Samuel G. Hirsch, M. Taysing-Lara, Eric Ngo, Weimin Zhou
Publikováno v:
Thin Solid Films. 660:282-286
Design, fabrication and characterization of an active single-negative metamaterial device in the terahertz (THz) spectrum is presented. The device is constructed by vertical split-ring unit cells which incorporate a Ba0.6Sr0.4TiO3 (BST) thin film who
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03a74527c0c2a67a9c766e5286248551
https://doi.org/10.1016/j.tsf.2018.06.026
https://doi.org/10.1016/j.tsf.2018.06.026
Publikováno v:
Frontiers in Optics + Laser Science APS/DLS.
We present metamaterial tunable notch filters operating from 8 to 12 µm based on the guided-mode resonance phenomenon using high-refractive index dielectric materials and their characterization using a customized infrared spectrometer.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9db7417d474d650b97ff7041e09f17e
https://doi.org/10.1364/fio.2019.jw4a.71
https://doi.org/10.1364/fio.2019.jw4a.71
Autor:
W. Chang, Gerard Dang, Amy W. K. Liu, Xiao-Ming Fang, C.L. Tan, Y. Wang, James C. M. Hwang, H. Susanto Djie, Boon S. Ooi, Joel M. Fastenau
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 14:1230-1238
We report on the development of InAs/InGaAlAs quantum-dash-in-well structure on InP substrate for wideband emitter applications. A spectral width as broad as 58 meV observed from both photoluminescence and surface photovoltage spectroscopy on the sam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2a74e0a7d2c98105f92812b748df6c5
https://doi.org/10.1109/jstqe.2008.919277
https://doi.org/10.1109/jstqe.2008.919277
Autor:
W. Chang, James C. M. Hwang, Dong-Ning Wang, Gerard Dang, Amy W. K. Liu, H. Susanto Djie, Xiao-Ming Fang, Y. Wang, Boon S. Ooi, Ying Wu, Y.H. Ding, Joel M. Fastenau
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 14:1239-1249
We investigate the intermixing effect in InAs/InAlGaAs quantum-dash-in-well structures grown on InP substrate. Both impurity-free vacancy disordering (IFVD) via dielectric cap annealing, and impurity-induced disordering (IID) using nitrogen ion-impla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a0b048947369462ee007ac5c3c5cf6a
https://doi.org/10.1109/jstqe.2008.921396
https://doi.org/10.1109/jstqe.2008.921396
Autor:
Dong-Ning Wang, Hery S. Djie, C.E. Dimas, Gerard Dang, James C. M. Hwang, Boon-Siew Ooi, W. Chang
Publikováno v:
IEEE Sensors Journal. 7:251-257
We report on the design and fabrication of a novel wideband superluminescent diode (SLD) based on InGaAs/GaAs quantum-dot structure. In this device, we monolithically integrate a photon absorber section to suppress lasing action and optical feedback
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcc8e80c9412f8598673a858db2448c9
https://doi.org/10.1109/jsen.2006.886884
https://doi.org/10.1109/jsen.2006.886884
Autor:
Monica Taysing-Lara, Grace D. Metcalfe, Matt Ivill, Nathaniel Woodward, Melanie W. Cole, Daniel Shreiber, Amir Zaghloul, Weimin Zhou, Gerard Dang, Eric Ngo
We have developed novel metamaterial devices and metastructures with new electronic and optoelectronic (OE) properties and used them to design and fabricate devices, such as slow-light, low-loss waveguides, terahertz modulators, and wideband radio fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4f2e5debfc1e5420da10b89f9dd5c5d
https://doi.org/10.21236/ada614390
https://doi.org/10.21236/ada614390
Publikováno v:
SPIE Proceedings.
We have designed new THz metastructure waveguides on Si wafers, aimed for low propagation loss and integration with Si-based integrated circuits. The waveguide has a round cross-sectional hollow-core, surrounded by high reflectioncladding- walls form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b4b3c24fd24c92a0a70a39be9c6387f
https://doi.org/10.1117/12.2079720
https://doi.org/10.1117/12.2079720
Autor:
Weimin Zhou, David M. Mackie, Monica Taysing-Lara, Gerard Dang, Peter G. Newman, Stefan Svensson
Publikováno v:
Solid-State Electronics. 50:908-913
We present a novel device concept for a reconfigurable optoelectronic integrated circuit (OEIC) that can be reprogrammed for many different functionalities. We report on our preliminary design, modeling, and fabrication of a semiconductor based photo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a7fc889ae1581ae85e8aa7a7caa8d9e
https://doi.org/10.1016/j.sse.2006.05.005
https://doi.org/10.1016/j.sse.2006.05.005
Autor:
W. Chang, Gerard Dang, Hery S. Djie, Y. Wang, Joel M. Fastenau, James C. M. Hwang, X. M. Fang, Boon S. Ooi, W. K. Liu, Y. Wu
Publikováno v:
Laser Physics. 18:400-402
The first demonstration of a monolithic integrated extended-cavity laser in an InAs/InAlGaAs quantum-dash-in-well structure on an InP substrate is reported. The integration is achieved using nitrogen implantation-induced quantum-dash intermixing. A d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e36bc32b787613f313261b8109ef0ac6
https://doi.org/10.1134/s11490-008-4007-1
https://doi.org/10.1134/s11490-008-4007-1
Publikováno v:
IEEE Photonics Technology Letters. 18:2329-2331
We report the improvement of ~1.62-mum wavelength InAs-InAlGaAs quantum-dash-in-asymmetric-well laser performance using rapid thermal annealing. After the postgrowth annealing at 700 degC for 2 min, the internal quantum efficiency is increased from 9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a22b9a9cce13f5869a6586ce1e23350
https://doi.org/10.1109/lpt.2006.885301
https://doi.org/10.1109/lpt.2006.885301