Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Gerard Colston"'
Autor:
Gerard Colston, Kelly Turner, Arne Renz, Kushani Perera, Peter M. Gammon, Marina Antoniou, Vishal A. Shah
Publikováno v:
Materials, Vol 17, Iss 7, p 1587 (2024)
We demonstrate the growth of 3C-SiC with reduced planar defects on a micro-scale compliant substrate. Heteroepitaxial growth of 3C-SiC on trenches with a width and separation of 2 µm, etched into a Si(001) substrate, is found to suppress defect prop
Externí odkaz:
https://doaj.org/article/ee2e52b46dff43ce907584505c220bec
Publikováno v:
Materials & Design, Vol 211, Iss , Pp 110135- (2021)
The alloy silicon carbon (Si1-yCy) has various strain engineering applications. It is often implemented as a dopant diffusion barrier and has been identified as a potential buffer layer for cubic silicon carbide (3C-SiC) heteroepitaxy. While suspende
Externí odkaz:
https://doaj.org/article/a07697fc2fcc4bb7968cd8c9bec98adf
Publikováno v:
Semiconductor Science and Technology. 37:065003
Optical reflection spectroscopy techniques offer a non-destructive and fast method of measuring the thickness of silicon (Si) epilayers, enabling very fast thickness uniformity mapping across the full surface of epiwafers up to 450 mm in diameter. Ho
Autor:
Oksana Trushkevych, David R. Leadley, Maksym Myronov, Vishal Shah, L. Q. Zhou, Gerard Colston, Rachel S. Edwards
Knowledge of the mechanical properties and stability of thin film structures is important for device operation. Potential failures related to crack initiation and growth must be identified early, to enable healing through e.g. annealing. Here, three
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ba1a9dba9e2b5c05c1aae246519ebfa
http://wrap.warwick.ac.uk/135276/7/WRAP-ultrasonic-inspection-self-healing-Ge-3C-SiC-semiconductor-membranes-Edwards--2020.pdf
http://wrap.warwick.ac.uk/135276/7/WRAP-ultrasonic-inspection-self-healing-Ge-3C-SiC-semiconductor-membranes-Edwards--2020.pdf
Autor:
Oliver Newell, David R. Leadley, Vishal Shah, Igor P. Dolbnya, Maksym Myronov, Gerard Colston, Stephen Rhead
Publikováno v:
Materials & Design, Vol 103, Iss, Pp 244-248 (2016)
Micro X-ray diffraction (μ-XRD) has been used to map the strain profile of a suspended crystalline cubic Silicon Carbide (3C-SiC) square membrane. While the presence of crystal defects in the 3C-SiC epilayer induces significant errors on the positio
Autor:
Stephen Rhead, Igor P. Dolbnya, Vishal Shah, Gerard Colston, Maksym Myronov, Oliver Newell, David R. Leadley
Publikováno v:
Materials Science Forum. 858:274-277
The residual strain has been mapped across suspended 3C-SiC membranes and wires using synchrotron based micro X-ray diffraction (μ-XRD). Residual tensile strain is observed to relax slightly upon suspension in both sets of structures. Similar maps w
Autor:
Maksym Myronov, Gerard Colston
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Autor:
Stephen Rhead, Phil Mawby, Gerard Colston, Maksym Myronov, Yogesh K. Sharma, Vishal Shah, David R. Leadley
Publikováno v:
Materials Science Forum. :571-574
Vertical Schottky diodes have been fabricated on low C content Si1-xCxand 3C-SiC epilayers epitaxially grown on Si(001) substrates. Significant leakage current was observed in 3C-SiC diodes under reverse bias, masking any rectifying behavior. This is
Autor:
Neil R. Wilson, David Patchett, Richard J. H. Morris, Phil Allred, V. Kachkanov, Vishal Shah, Igor P. Dolbnya, Juan Sebastián Reparaz, K. J. S. Sawhney, Gerard Colston, C. M. Sotomayor Torres, Maksym Myronov, Stephen Rhead, John E. Halpin, David R. Leadley, June Finch
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
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Germanium membranes and microstructures of 50-1000 nm thickness have been fabricated by a combination of epitaxial growth on a Si substrate and simple etching processes. The strain in these structures has been measured by high-resolution micro-X-ray
Publikováno v:
MIPRO
This work investigates the impact of Sn segregation on the growth of Ge1−xSnx epi-layers using a reduced pressure chemical vapour deposition (RP-CVD) system with the common precursors Ge2H6 and SnCl4. The investigated samples were grown on top of a