Zobrazeno 1 - 10
of 333
pro vyhledávání: '"Gerald Lucovsky"'
Autor:
George Collins, Kimberley Nichols, Daniel Zeller, R. Karimov, David Marsden, Gerald Lucovsky, Robert Lawrence Ives, Edl Schamiloglu
Publikováno v:
IEEE Transactions on Plasma Science. 43:2571-2580
Traditional application of multipactor coatings applied with sputtering techniques to high-power RF windows typically performs well when applied to sintered powder ceramics. Unfortunately, sputtered coatings do not adhere well to crystal materials, s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b88145be235782f0e6337393bac5297
https://doi.org/10.1109/tps.2015.2450678
https://doi.org/10.1109/tps.2015.2450678
Publikováno v:
Surface and Coatings Technology. 242:183-186
Remote plasma processing (RPP) provides pathways to the formation of photovoltaic (PV) and thin-film-transistor (TFT) devices that include buried interfaces. This is made possible by separate and independent control of (i) plasma excited O- and N-ato
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0d838a48a514f2c74cae6194bcfd367
https://doi.org/10.1016/j.surfcoat.2013.06.104
https://doi.org/10.1016/j.surfcoat.2013.06.104
Publikováno v:
Microelectronic Engineering. 109:370-373
Ge interface nitride passivation.Si passivation layer thickness.SiON surface on Si passivation layer.Anneal to eliminate Ge-N bonds.Symmetric NMOS and CMOS capacitors. Three significant issues with respect to the ultimate scaling limitations of CMOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0aff1db6f55541e621a7974a2b3ffbb2
https://doi.org/10.1016/j.mee.2013.03.031
https://doi.org/10.1016/j.mee.2013.03.031
Publikováno v:
Journal of Nanoscience and Nanotechnology. 12:4811-4819
Performance and reliability in semiconductor devices are limited by electronically active defects, primarily O-atom and N-atom vacancies. Synchrotron X-ray spectroscopy results, interpreted in the context of two-electron multiplet theories, have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::125701f90bf2c0c80a5b0efb7c361bae
https://doi.org/10.1166/jnn.2012.4912
https://doi.org/10.1166/jnn.2012.4912
Publikováno v:
Journal of Nanoscience and Nanotechnology. 12:4749-4756
Only two of the first row transition metals have elemental oxides that are either ferro- or ferri-magnetic. These are CrO2 and Fe3O4. The electron spin alignment that promotes the ferro(i)magnetism is associated with a double exchange mechanism that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e8f7ead76ab0e0cf583e1354fa61820
https://doi.org/10.1166/jnn.2012.4911
https://doi.org/10.1166/jnn.2012.4911
Autor:
Daniel Zeller, Gerald Lucovsky
Publikováno v:
Journal of Nanoscience and Nanotechnology. 11:7974-7981
Non-crystalline GeO2 films remote were plasma deposited at 300 degrees C onto Ge substrates after a final rinse in NH4OH. The reactant precursors gas were: (i) down-stream injected 2% GeH4 in He as the Ge precursor, and (ii) up-stream, plasma excited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35936740910694b3e9feaf471bf32c1f
https://doi.org/10.1166/jnn.2011.5090
https://doi.org/10.1166/jnn.2011.5090
Autor:
Jinwoo Kim, Gerald Lucovsky
Publikováno v:
Journal of Nanoscience and Nanotechnology. 11:7962-7968
The paper uses remote plasma assisted deposition, oxidation and nitridation processes for depositing thin films of metallic TiN on crystalline sapphire (0001) substrates. These films on sapphire substrates are being studied as window materials for hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1deb43c786ea02882d4f1196560e6b39
https://doi.org/10.1166/jnn.2011.5089
https://doi.org/10.1166/jnn.2011.5089
Autor:
Michael L. Alles, Robert A. Reed, Ronald D. Schrimpf, Sokrates T. Pantelides, Gerald Lucovsky, Daniel M. Fleetwood
Publikováno v:
Microelectronic Engineering. 88:1259-1264
Exposure to radiation poses significant challenges for electronic devices, including parametric degradation, loss of data, or catastrophic failure. The challenges and solutions change significantly as new materials are introduced and feature sizes be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d203d139edd15a0eea245c876473d64
https://doi.org/10.1016/j.mee.2011.03.117
https://doi.org/10.1016/j.mee.2011.03.117
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 28:693-696
The stability of the tetragonal phase of Ge doped HfO2 thin films on Si(100) was investigated. Hf(Ge)O2 films with Ge atomic concentrations varying from 0% to 15% were deposited by remote plasma chemical vapor deposition. The atomic structure on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f62aa92766ecfae1e9f16661bf680f1a
https://doi.org/10.1116/1.3430562
https://doi.org/10.1116/1.3430562
Autor:
Gerald Lucovsky
Publikováno v:
physica status solidi c. 7:743-746
This article addresses three different aspects of nano-scale structure that are important for the implementation of high-k gate dielectrics, such as HfO2 and Hf Si oxynitride alloys, for advanced gate stack applications ultra large scale integrated (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e88ad7e9153c0fe44adf5cec4a6aadd
https://doi.org/10.1002/pssc.200982843
https://doi.org/10.1002/pssc.200982843