Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Gerald C. Huth"'
Publikováno v:
IEEE Transactions on Nuclear Science. 23:102-111
Measurement results obtained with HgI2 detectors at room temperature in the low energy x-ray region down to 2 keV are reported. The best resolution obtained is 548 e V for 5.9 keV x-rays, and the 2.01 keV phosphorous x-ray line has been resolved with
Publikováno v:
IEEE Transactions on Nuclear Science. 30:431-435
Low noise, large area silicon avalanche photodiodes have now been made to replace photomultiplier tubes in certain scintillator detector applications in which overall size and ruggedness are important. Previous devices have been limited by poor optic
Publikováno v:
Cancer. 62:1402-1408
This article documents the study of 383 cases of lung cancer in uranium miners and presents for the first time the relationship of radioactive radon gas and cigarette smoking. There is evidence that alpha radiation from radon gas at exposure levels a
Publikováno v:
Nuclear Instruments and Methods. 135:573-576
High resolution X-ray detectors with areas up to 20 mm 2 have been fabricated from a 100 g HgI 2 single crystal. The 1.5 keV aluminum K α X-ray line is clearly resolved with the detectors operating at room temperature.
Publikováno v:
IEEE Transactions on Nuclear Science. 24:521-524
A fluorescence bronchoscope has been developed for localization of small bronchogenic tumors at the carcinoma in situ stage. Injected hematoporphyrin-derivative is preferentially taken up or retained by a malignant tumor, and very small amounts can b
Publikováno v:
IEEE Transactions on Nuclear Science. 17:265-274
The attractiveness of silicon avalanche radiation detection systems lies in the following properties: (1) Extremely low noise and low background counting capability, which is maintained to temperatures as high as 100°C, without resorting to coincide
Autor:
Robert J. Locker, Gerald C. Huth
Publikováno v:
Applied Physics Letters. 9:227-230
A concept for the detection of ionizing radiation which utilizes the inherent high speed and large amplitude of the induced charge pulse in a semiconductor avalanche detector coupled with the tunnel diode element is described. It has been shown possi
Publikováno v:
IEEE Transactions on Nuclear Science. 12:275-280
Significant internal pulse amplification has been observed in silicon p-n junction radiation detectors operated in the very high field (but prebreakdown) region. Such internal electric field values (peak fields of 60 - 250 kilovolts cm-1) are attaina
Publikováno v:
IEEE Transactions on Nuclear Science. 15:246-257
Research on avalanche or high field types of semiconductor detectors has increased within the past two years, impelled, in part, by the great interest in the photo-detection field. We have concentrated on the surface contoured-deep junction diffusion
Autor:
Gerald C. Huth
Publikováno v:
IEEE Transactions on Nuclear Science. 13:36-42
Characterization of the gallium diffused junctions found useful as amplifying radiation detectors indicate a rather surprising window-junction depth relationship. The window, at only the self bias of the junction, has been measured to be a micron or