Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Georgiy M. Guryanov"'
Autor:
Mark Holtz, Denis Myasishchev, Sandeep Sohal, Georgiy M. Guryanov, Rakib Uddin, Vladimir Kuryatkov, Sergey A. Nikishin, Vladimir Mansurov, Mahesh Pandikunta
Publikováno v:
Journal of Electronic Materials. 41:824-829
In x Al1−x N alloys with low indium content (0.025
Autor:
Rajaram Bhat, Georgiy M. Guryanov
Publikováno v:
Journal of Crystal Growth. 445:108-109
Autor:
Rajaram Bhat, A. Budrevich, Sergey A. Nikishin, Catherine Caneau, B. Borisov, Georgiy M. Guryanov, T.P. St. Clair
Publikováno v:
Applied Surface Science. 252:7208-7210
A new SIMS approach is proposed for quantified depth profiling of III-V semiconductor alloys. We show that the ratio of MCs + ion intensities to the sum of all element intensities (M 1 Cs + + M 2 Cs + ...) from semiconductor alloys gives accurate ele
Autor:
A. L. Pivovarov, Georgiy M. Guryanov
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 30:040601
Successful self-adjusted charge compensation was demonstrated for a CAMECA magnetic-sector secondary ion mass spectrometer applied in negative mode. Operation with the normal-incidence electron gun (NEG) potential positively biased relative to a samp