Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Georgios Chatzigiannakis"'
Autor:
Zoi Georgiopoulou, Apostolis Verykios, Kalliopi Ladomenou, Katerina Maskanaki, Georgios Chatzigiannakis, Konstantina-Kalliopi Armadorou, Leonidas C. Palilis, Alexander Chroneos, Evangelos K. Evangelou, Spiros Gardelis, Abd. Rashid bin Mohd Yusoff, Athanassios G. Coutsolelos, Konstantinos Aidinis, Maria Vasilopoulou, Anastasia Soultati
Publikováno v:
Nanomaterials, Vol 13, Iss 1, p 169 (2022)
Charge injection and transport interlayers play a crucial role in many classes of optoelectronics, including organic and perovskite ones. Here, we demonstrate the beneficial role of carbon nanodots, both pristine and nitrogen-functionalized, as elect
Externí odkaz:
https://doaj.org/article/3aac02582f204981b1cfa1e7bed6f5dd
Autor:
Tobias Voss, Jörgen Jungclaus, Renaud Leturcq, Angelina Jaros, Spyros Gardelis, Maria Kandyla, Georgios Chatzigiannakis
Publikováno v:
ACS Applied Electronic Materials. 2:2819-2828
We develop ZnO/p-Si photodetectors by atomic layer deposition (ALD) of ZnO thin films on laser-microstructured silicon, and we investigate their electrical and optical behavior, demonstrating high ...
Autor:
Georgios Chatzigiannakis, Angelina Jaros, Renaud Leturcq, Jörgen Jungclaus, Tobias Voss, Spiros Gardelis, Maria Kandyla
An isotype heterojunction n+-ZnO/n-Si photodetector is developed, demonstrating wavelength-selective or broadband operation, depending on the applied bias voltage. Additionally, at self-powered (zero bias) operation, it distinguishes between UV, visi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89916bf8bff4f417b4413a8d441a6517
Autor:
M. Kandyla, Tobias Voss, Angelina Jaros, Renaud Leturcq, Spiros Gardelis, Jörgen Jungclaus, Georgios Chatzigiannakis
Publikováno v:
Conference on Lasers and Electro-Optics.
We develop ZnO/p-Si photodetectors by ALD deposition of ZnO thin films on laser- microstructured Si, which demonstrate high sensitivity and broadband operation (UV-Vis-NIR), due to increased specific surface area of the heterojunction and increased l