Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Georgii L. Kuryshev"'
Autor:
Nonna V. Zotova, Natalya Tarakanova, S. A. Karandashev, M.A. Remennyi, Anatoly P. Kovchavtsev, N.M. Stus, Vladimir G. Polovinkin, B. A. Matveev, N. D. Il’inskaya, Georgii L. Kuryshev
Publikováno v:
MRS Proceedings. 891
Deep mesa etching and surface roughening have been implemented to InAs flip-chip LEDs emitting at 3300 nm (300 K). Near field and power measurements confirmed the output power enhancement of about 2 and brightness increase with and equivalent to a bl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::328552272e95731559edb694a6d23e03
https://doi.org/10.1557/proc-0891-ee01-04
https://doi.org/10.1557/proc-0891-ee01-04
Autor:
V. M. Bazovkin, A. S. Stroganov, Anatolii P. Kovchavtsev, Georgii L. Kuryshev, I. I. Lee, V. M. Efimov, N. A. Valisheva, A. A. Guzev
Publikováno v:
SPIE Proceedings.
Technology and design of linear 1x384 MIS photodetectors on InAs homoepitaxial substrate are developed. The experimental results on IR focal plane arrays (IR FPA) intended for rapid IR spectrometers with registration time 0,1 - 50 ms are presented.©
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::165b5fe9a25d4058925f1d9bdca08177
https://doi.org/10.1117/12.517247
https://doi.org/10.1117/12.517247
Autor:
Anatolii V. Dvurechenskii, Georgii L. Kuryshev, Alexander I. Nikivorov, Ivan A. Ryazantsev, Anatolii P. Kovchavsev, Oleg P. Pchelyakov
Publikováno v:
SPIE Proceedings.
Si(Ge) junction (of p-i-n diode type) containing Ge of self-assembled quantum dots (SAQD). in a ~0,6 μm-thick near-surface layer were investigated. Analysis of photo- and electrophysical performances allowed to revel ~ 10-103 Iph(V) photocurrent gai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f76cf888a6b62fc577571a4969db03be
https://doi.org/10.1117/12.517308
https://doi.org/10.1117/12.517308