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Akademický článek

High-Performance Visible-to-SWIR Photodetector Based on the Layered WS 2 Heterojunction with Light-Trapping Pyramidal Black Germanium.

Autor: Bhattacharya K; Centre for Applied Research in Electronics, Indian Institute of Technology, Delhi, New Delhi 110016, India., Chaudhary N; School of Interdisciplinary Research, Indian Institute of Technology, Delhi, New Delhi 110016, India., Bisht P; Department of Physics, Indian Institute of Technology, Delhi, New Delhi 110016, India., Satpati B; Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Kolkata 700064, India., Manna S; Department of Electrical Engineering, Indian Institute of Technology, Delhi, New Delhi 110016, India., Singh R; Department of Physics, Indian Institute of Technology, Delhi, New Delhi 110016, India., Mehta BR; Department of Physics, Indian Institute of Technology, Delhi, New Delhi 110016, India., Georgiev YM; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden 01328, Germany., Das S; Centre for Applied Research in Electronics, Indian Institute of Technology, Delhi, New Delhi 110016, India.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Sep 11; Vol. 16 (36), pp. 48517-48525. Date of Electronic Publication: 2024 Aug 31.

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Akademický článek

Evolution of point defects in pulsed-laser-melted Ge 1- x Sn x probed by positron annihilation lifetime spectroscopy.

Autor: Steuer O; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany.; Institute of Materials Science, Technische Universität Dresden, Budapester Str. 27, 01069 Dresden, Germany., Liedke MO; Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany., Butterling M; Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany., Schwarz D; University of Stuttgart, Institute of Semiconductor Engineering, 70569 Stuttgart, Germany., Schulze J; Fraunhofer Institute for Integrated Systems and Device Technology IISB, 91058 Erlangen, Germany., Li Z; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany., Wagner A; Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany., Fischer IA; Experimental Physics and Functional Materials, Brandenburgische Technische Universität Cottbus-Senftenberg, 03046 Cottbus, Germany., Hübner R; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany., Zhou S; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany., Helm M; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany.; Center for Advancing Electronics Dresden, Technische Universität Dresden, Helmholtzstraße 18, 01062 Dresden, Germany., Cuniberti G; Institute of Materials Science, Technische Universität Dresden, Budapester Str. 27, 01069 Dresden, Germany., Georgiev YM; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany.; Institute of Electronics, Bulgarian Academy of Sciences, 72, Tsarigradsko Chausse Blvd., 1784 Sofia, Bulgaria., Prucnal S; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany.

Publikováno v: Journal of physics. Condensed matter : an Institute of Physics journal [J Phys Condens Matter] 2023 Nov 16; Vol. 36 (8). Date of Electronic Publication: 2023 Nov 16.

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Akademický článek

Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization.

Autor: Ghosh S; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden 01328, Germany.; Technische Universität Dresden, Dresden 01069, Germany., Khan MB; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden 01328, Germany., Chava P; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden 01328, Germany.; Technische Universität Dresden, Dresden 01069, Germany., Watanabe K; National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan., Taniguchi T; National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan., Prucnal S; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden 01328, Germany., Hübner R; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden 01328, Germany., Mikolajick T; Technische Universität Dresden, Dresden 01069, Germany.; Namlab gGmbH, Nöthnitzer Strasse 64, Dresden 01187, Germany.; Technische Universität Dresden, Center for Advancing Electronics Dresden (CfAED), Dresden 01069, Germany., Erbe A; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden 01328, Germany.; Technische Universität Dresden, Dresden 01069, Germany.; Technische Universität Dresden, Center for Advancing Electronics Dresden (CfAED), Dresden 01069, Germany., Georgiev YM; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden 01328, Germany.; Institute of Electronics at the Bulgarian Academy of Sciences, 72 Tsarigradsko chaussee blvd, Sofia 1784, Bulgaria.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2023 Aug 30; Vol. 15 (34), pp. 40709-40718. Date of Electronic Publication: 2023 Aug 22.

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Akademický článek

Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting.

Autor: Steuer O; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany., Schwarz D; University of Stuttgart, Institute of Semiconductor Engineering, 70569 Stuttgart, Germany., Oehme M; University of Stuttgart, Institute of Semiconductor Engineering, 70569 Stuttgart, Germany., Schulze J; Fraunhofer Institute for Integrated Systems and Device Technology IISB, 91058 Erlangen, Germany., Mączko H; Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland., Kudrawiec R; Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland., Fischer IA; Experimental Physics and Functional Materials, Brandenburgische Technische Universität Cottbus-Senftenberg, 03046 Cottbus, Germany., Heller R; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany., Hübner R; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany., Khan MM; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany., Georgiev YM; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany.; Institute of Electronics, Bulgarian Academy of Sciences, 72, Tsarigradsko Chausse Blvd, 1784 Sofia, Bulgaria., Zhou S; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany., Helm M; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany., Prucnal S; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany.

Publikováno v: Journal of physics. Condensed matter : an Institute of Physics journal [J Phys Condens Matter] 2022 Dec 14; Vol. 35 (5). Date of Electronic Publication: 2022 Dec 14.

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Akademický článek

Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon.

Autor: Wang M; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany. m.wang@hzdr.de., Yu Y; Institute of Semiconductors and Microsystems, Technische Universität Dresden, 01062 Dresden, Germany. ye.yu@tu-dresden.de., Prucnal S; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany. m.wang@hzdr.de., Berencén Y; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany. m.wang@hzdr.de., Shaikh MS; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany. m.wang@hzdr.de., Rebohle L; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany. m.wang@hzdr.de., Khan MB; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany. m.wang@hzdr.de., Zviagin V; Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany., Hübner R; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany. m.wang@hzdr.de., Pashkin A; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany. m.wang@hzdr.de., Erbe A; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany. m.wang@hzdr.de.; Centre for Advancing Electronics Dresden (CfAED), Technische Universität Dresden, 01062 Dresden, Germany., Georgiev YM; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany. m.wang@hzdr.de.; Institute of Electronics at the Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria., Grundmann M; Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany., Helm M; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany. m.wang@hzdr.de.; Institut für Angewandte Physik (IAP), Technische Universität Dresden, 01062 Dresden, Germany., Kirchner R; Institute of Semiconductors and Microsystems, Technische Universität Dresden, 01062 Dresden, Germany. ye.yu@tu-dresden.de.; Centre for Advancing Electronics Dresden (CfAED), Technische Universität Dresden, 01062 Dresden, Germany., Zhou S; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany. m.wang@hzdr.de.

Publikováno v: Nanoscale [Nanoscale] 2022 Feb 17; Vol. 14 (7), pp. 2826-2836. Date of Electronic Publication: 2022 Feb 17.

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