Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Georgescu, A. B."'
Autor:
Devarakonda, Aravind, Koay, Christie S., Chica, Daniel G., Thinel, Morgan, Kundu, Asish K., Lin, Zhi, Georgescu, Alexandru B., Rossi, Sebastian, Han, Sae Young, Ziebel, Michael E., Holbrook, Madisen A., Rajapitamahuni, Anil, Vescovo, Elio, Watanabe, K., Taniguchi, T., Delor, Milan, Zhu, Xiaoyang, Pasupathy, Abhay N., Queiroz, Raquel, Dean, Cory R., Roy, Xavier
Materials hosting flat electronic bands are a central focus of condensed matter physics as promising venues for novel electronic ground states. Two-dimensional (2D) geometrically frustrated lattices such as the kagome, dice, and Lieb lattices are att
Externí odkaz:
http://arxiv.org/abs/2408.01512
Autor:
Spring, Jonathan, Fedorova, Natalya, Georgescu, Alexandru B., Vogel, Alexander, De Luca, Gabriele, Jöhr, Simon, Piamonteze, Cinthia, Rossell, Marta D., Íñiguez-González, Jorge, Gibert, Marta
The properties of functional oxide heterostructures are strongly influenced by the physics governing their interfaces. Modern deposition techniques allow us to accurately engineer the interface physics through the growth of atomically precise heteros
Externí odkaz:
http://arxiv.org/abs/2406.09937
Autor:
Georgescu, Alexandru B., Ren, Peiwen, Karpovich, Christopher, Olivetti, Elsa, Rondinelli, James M.
The discovery of materials that exhibit a metal-insulator transition (MIT) is key to the development of multiple types of novel efficient microelectronic and optoelectronic devices. However, identifying MIT materials is challenging due to a combinati
Externí odkaz:
http://arxiv.org/abs/2404.08653
The non-relativistic spin-splitting (NRSS) of electronic bands in "altermagnets" has sparked renewed interest in antiferromagnets (AFMs) that have no net magnetization. However, altermagnets with collinear and compensated magnetism are not the only t
Externí odkaz:
http://arxiv.org/abs/2402.14321
Autor:
Georgescu, Alexandru B.
We study two materials and clarify the mechanisms at play in stabilizing an insulating state, and an impurity level in the bandgap using ab initio calculations: Cu-doped Pb$_{10}$(PO$_4$)$_6$O ('LK-99') and V-doped SrTiO$_3$, both transition metal-do
Externí odkaz:
http://arxiv.org/abs/2308.07295
Autor:
Kautzsch, Linus, Georgescu, Alexandru B., Puggioni, Danilo, Kent, Greggory, Taddei, Keith M., Reilly, Aiden, Seshadri, Ram, Rondinelli, James M., Wilson, Stephen D.
Publikováno v:
Phys. Rev. Materials 7 (2023) 104406
MnSiN$_2$ is a transition metal nitride with Mn and Si ions displaying an ordered distribution on the cation sites of a distorted wurtzite-derived structure. The Mn$^{2+}$ ions reside on a 3D diamond-like covalent network with strong superexchange pa
Externí odkaz:
http://arxiv.org/abs/2308.04558
Autor:
Domínguez, C., Fowlie, J., Georgescu, A. B., Mundet, B., Jaouen, N., Viret, M., Suter, A., Millis, A. J., Salman, Z., Prokscha, T., Gibert, M., Triscone, J. -M.
In this work we present a model system built out of artificially layered materials, allowing us to understand the interrelation of magnetic phases with that of the metallic-insulating phase at long length-scales, and enabling new strategies for the d
Externí odkaz:
http://arxiv.org/abs/2211.06811
We study the consequences of the approximately trigonal ($D_{3d}$) point symmetry of the transition metal (M) site in two-dimensional van der Waals MX$_2$ dihalides and MX$_3$ trihalides. The trigonal symmetry leads to a 2-2-1 orbital splitting of th
Externí odkaz:
http://arxiv.org/abs/2110.04665
We present a general methodology that enables the disentanglement of the electronic and lattice contributions to the metal-insulator transition by building an energy landscape from numerical solutions of the equation of state. The methodology works w
Externí odkaz:
http://arxiv.org/abs/2105.02271
Autor:
Georgescu, Alexandru B., Ren, Peiwen, Toland, Aubrey R., Zhang, Shengtong, Miller, Kyle D., Apley, Daniel W., Olivetti, Elsa A., Wagner, Nicholas, Rondinelli, James M.
Publikováno v:
Chem. Mater. 33, 14, 5591-5605 (2021)
Metal-insulator transition (MIT) compounds are materials that may exhibit insulating or metallic behavior, depending on the physical conditions, and are of immense fundamental interest owing to their potential applications in emerging microelectronic
Externí odkaz:
http://arxiv.org/abs/2010.13306