SOI 1T-DRAM cells with variable channel length and thickness: Experimental comparison of programming mechanisms

Autor: Georges Guegan, Thomas Ernst, Sorin Cristoloveanu, Olivier Faynot, Alexandre Hubert, Maryline Bawedin

Publikováno v: Solid-State Electronics. :256-262

Several concepts of capacitor-less single-transistor (1T) DRAM have recently been proposed to overcome the scaling limitations of bulk DRAMs. In this study, we focus on the comparison of two programming mechanisms of 1T-DRAMs: the impact ionization (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::344eef36a5b3e9c994217b7b2979472e
https://doi.org/10.1016/j.sse.2011.06.028

Analysis of PD SOI pMOSFET Device Performance Enhancement due to Direct-Tunneling Current in the Partial n+ Poly Gate

Autor: Georges Guegan, O. Gonnard, Patricia Touret, Simon Deleonibus, Gilles Gouget, Jeremy Pretet, Romain Gwoziecki, Christine Raynaud

Publikováno v: ECS Transactions. 6:165-170

In this paper, we investigate and analyze the impact of the body potential on the performance enhancement of BC pMOSFET when the body contact is floating. Many geometries and layouts of PD SOI pMOSFET with 1.6 nm physical gate oxide have been compare

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce238f7addfb3badc58456262053ed6b
https://doi.org/10.1149/1.2728856

Experimental comparison of programming mechanisms in 1T-DRAM cells with variable channel length

Autor: Alexandre Hubert, Maryline Bawedin, Sorin Cristoloveanu, Olivier Faynot, Thomas Ernst, Georges Guegan

Publikováno v: Proc. in ESSDERC 2010, (F. Gamiz, A. Godoy eds.), IEEE, ISBN
40th European Solid-State Device Research Conference
40th European Solid-State Device Research Conference, Sep 2010, Sevilla, Spain

The bulk DRAM scaling requirements have lead to many different concepts of capacitor-less single-transistor (1T) DRAM. Amongst the various effects used to program the cell, this study is focused on the Impact Ionization (II), the most common mechanis

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ef739a08df0928e645d1e0ec7d3a946
https://hal.science/hal-00604285

Evidence of Reduced Self Heating with Partially Depleted SOI MOSFET Scaling

Autor: Georges Guegan, O. Gonnard, Simon Deleonibus, Mikael Casse, Gilles Gouget, Romain Gwoziecki, Christine Raynaud

Publikováno v: MRS Proceedings. 913

SOI technology offers advantages over bulk silicon and become a good candidate for analog/RF applications. However, the presence of a buried oxide causes self-heating which can degrade the device performance. The effects of self-heating have been exa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6a05019dbe47096addd4a689556b61aa
https://doi.org/10.1557/proc-0913-d03-02

Field mapping of focused ion beam prepared semiconductor devices by off-axis and dark field electron holography

Autor: David Cooper, Florence Guyot, Eric Robin, Georges Guegan, Isabelle Constant, Christophe Plantier, P. Rivallin

Publikováno v: Semiconductor Science and Technology. 28:125013

Off-axis electron holography is a unique technique in that it can be used to provide maps of the electrostatic potentials and strain in semiconductor specimens with nm-scale resolution. In this paper, we show that if sufficient care is taken, focused

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::75c63685ba52429270c1ef081c37f098
https://doi.org/10.1088/0268-1242/28/12/125013