Zobrazeno 1 - 10 of 193 pro vyhledávání: '"Georges Bremond"'
1
Evidence of Piezoelectric Potential and Screening Effect in Single Highly Doped ZnO:Ga and ZnO:Al Nanowires by Advanced Scanning Probe Microscopy
Autor: Vincent Consonni, Pierre Gaffuri, David Albertini, Georges Bremond, Oleksandr Synhaivskyi, Jean-Michel Chauveau, Brice Gautier
Publikováno v: Journal of Physical Chemistry C
Journal of Physical Chemistry C, American Chemical Society, 2021, 125 (28), pp.15373-15383. ⟨10.1021/acs.jpcc.1c00926⟩
International audience; A complete study based on advanced atomic force microscopy electrical mode called scanning spreading resistance microscopy (SSRM) is carried out on a series of samples of zinc oxide (ZnO) nanowires grown by chemical bath depos
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::580c0e798978d7331120ecc72f6ffb42
https://hal.univ-grenoble-alpes.fr/hal-03318851/file/JPCC_AlexanderSyngaevsky_postprint_HAL.pdf
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2
Photoluminescence Imaging for Buried Defects Detection in Silicon: Assessment and Use-Cases
Autor: Georges Bremond, Delphine Le Cunff, I. Mica, Maxime Cannac, Romain Duru, José Baruchel, Thu-Nhi Tran-Thi
Publikováno v: IEEE Transactions on Semiconductor Manufacturing. 32:23-30
In this paper, the innovative photoluminescence imaging technique is described for applications to buried defect detection in silicon devices. The validity of this emerging technique is first assessed in comparison with well-established characterizat
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::374b7f84b0b33f11e1ffe37e560b15e6
https://doi.org/10.1109/tsm.2018.2871967
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4
Investigation of tip-depletion-induced fail in scanning capacitance microscopy for the determination of carrier type
Autor: Lin Wang, Andrei Sabac, Georges Bremond, Brice Gautier
Publikováno v: Ultramicroscopy
Ultramicroscopy, Elsevier, 2017, 174, pp.46-49. ⟨10.1016/j.ultramic.2016.12.016⟩
Scanning capacitance microscopy (SCM) was performed on an n -type Si multilayer structure doped by phosphorus whose concentration ranges from 2×10 17 to 2×10 19 cm −3 . Three types of tips were used, i.e. fresh Pt/Ir coated tip, worn Pt/Ir coated
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::936b9cbac063a72bb9c36b3e142cbbdf
https://doi.org/10.1016/j.ultramic.2016.12.016
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5
Deep traps localization in AlGaN/GaN MIS-HEMTs by a comparative study using capacitance and current deep level transient spectroscopies
Autor: Gérard Guillot, Philippe Ferrandis, Georges Bremond, Erwan Morvan, Mariam El-Khatib
Publikováno v: Journal of Physics: Conference Series
Journal of Physics: Conference Series, IOP Publishing, 2019, 1190, pp.012013. ⟨10.1088/1742-6596/1190/1/012013⟩
Journal of Physics: Conference Series, 2019, 1190, pp.012013. ⟨10.1088/1742-6596/1190/1/012013⟩
In this study, deep traps in multiple-finger normally-off AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) were identified. The localization of these traps has been established by a comparative study using capaci
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::460994d34e4ee24b3f759aa88f189083
https://hal.archives-ouvertes.fr/hal-02494693
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6
Gate length effect on trapping properties in AlGaN/GaN high-electron-mobility transistors
Autor: Erwan Morvan, Matthew Charles, Georges Bremond, Philippe Ferrandis, Mariam El-Khatib, Gérard Guillot, Marie-Anne Jaud
Publikováno v: Semiconductor Science and Technology
Semiconductor Science and Technology, IOP Publishing, 2019, 34 (4), pp.045011. ⟨10.1088/1361-6641/ab07d2⟩
Semiconductor Science and Technology, 2019, 34 (4), pp.045011. ⟨10.1088/1361-6641/ab07d2⟩
International audience
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::11eb3f5d17b295e2f64740d914f935da
https://hal.archives-ouvertes.fr/hal-03462243
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7
Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation
Autor: Gérard Guillot, Philippe Ferrandis, Erwan Morvan, Marie-Anne Jaud, Matthew Charles, Mariam El-Khatib, Georges Bremond
Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2019, 125 (3), pp.035702. ⟨10.1063/1.5055926⟩
Journal of Applied Physics, 2019, 125 (3), pp.035702. ⟨10.1063/1.5055926⟩
The localization of deep traps in normally-off AlGaN/GaN metal-oxide-semiconductor channel high-electron mobility transistors has been established by means of capacitance and current deep level transient spectroscopies (DLTS). Electrical simulations
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc934a07e09fb1d2ed567770310c2b5a
https://hal.archives-ouvertes.fr/hal-01998103
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8
Thermal Rounding Kinetics and Demonstration of Steep and Flat Facets Succession in Selective Si-Based Epitaxy
Autor: Didier Dutartre, Victorien Paredes-Saez, Georges Bremond
Publikováno v: ECS Transactions. 75:325-337
Si1-xGex(SiGe) alloys are integrated in more and more complex structures, and their applications are numerous. Initially, epitaxy process was applied for SiGe channels in 32nm technologies and beyond [1]. In the 20nm technology generation, SiGe epita
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05b9cdacd16b1ff11b9e1d272eb3edcc
https://doi.org/10.1149/07508.0325ecst
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9
Resolving ZnO-based coaxial core-multishell heterostructure by electrical scanning probe microscopy
Autor: Georges Bremond, Said Hassani, Lin Wang, Vincent Sallet, Corinne Sartel
Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2018, 113 (22), pp.222103. ⟨10.1063/1.5054685⟩
Coaxially periodic ZnO/ZnMgO core-multishell nanowire (NW) heterostructures were grown via a metal organic chemical vapor deposition method. We investigated their electrical properties via the application of two locally resolved electrical scanning p
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f9e826973014449a8afb7ea1e450e54
https://hal.archives-ouvertes.fr/hal-02072861/document
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10
AlGaN/GaN metal-insulator-semiconductor capacitors with a buried Mg doped layer characterized by deep level transient spectroscopy and photoluminescence
Autor: Philippe Ferrandis, Erwan Morvan, Gérard Guillot, Mariam El-Khatib, Georges Bremond
Publikováno v: SPIE Proceedings
SPIE OPTO 2018
SPIE OPTO 2018, Jan 2018, San Fransisco, United States. pp.39, ⟨10.1117/12.2289067⟩
International audience; GaN material holds an advantageous position in the fabrication of power devices. This advantage is manifested by the possibility to perform GaN based devices working in high voltage, high current, high frequency and high tempe
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd32a82c1ad0ea7773790685d674a75a
https://hal.archives-ouvertes.fr/hal-01928350
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