Zobrazeno 1 - 8
of 8
pro vyhledávání: '"George W. Mattson"'
Autor:
Kyle T. Vogt, Christopher E. Malmberg, Jacob C. Buchanan, George W. Mattson, G. Mirek Brandt, Dylan B. Fast, Paul H.-Y. Cheong, John F. Wager, Matt W. Graham
Publikováno v:
Physical Review Research, Vol 2, Iss 3, p 033358 (2020)
The subgap density of states of amorphous indium gallium zinc oxide (a-IGZO) is obtained using the ultrabroadband photoconduction response of thin-film transistors (TFTs). Density-functional theory simulations classify the origin of the measured subg
Externí odkaz:
https://doaj.org/article/d5e5868446bb459d932299954c102e52
Publikováno v:
ECS Transactions. 97:339-357
Amorphous oxide thin-film transistors (TFTs) have provided a new route to transparent, low power consumption, large-area display technology. The properties of these thin films are crucially dependent on material composition and process variations whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d55de506ab7ec5f00fbfa29d6ed97da9
https://doi.org/10.1149/09707.0339ecst
https://doi.org/10.1149/09707.0339ecst
Publikováno v:
Advanced Functional Materials. :2300742
Under varying growth and device processing conditions, ultrabroadband photoconduction (UBPC) reveals strongly evolving trends in the defect density of states (DoS) for amorphous oxide semiconductor thin-film transistors (TFTs). Spanning the wide band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a176d1734be706154f231b443bcd7464
https://doi.org/10.1002/adfm.202300742
https://doi.org/10.1002/adfm.202300742
Within the subgap of amorphous oxide semiconductors like amorphous indium gallium zinc oxide (a-IGZO) are donor-like and acceptor-like states that control the operational physics of optically transparent thin-film transistors (TFTs). Hydrogen incorpo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b5da1b4e018b5c361be4a846b9fe6bd
http://arxiv.org/abs/2111.08588
http://arxiv.org/abs/2111.08588
Autor:
John F. Wager, Dylan B. Fast, Kyle T. Vogt, G. Mirek Brandt, Christopher E. Malmberg, George W. Mattson, Matt W. Graham, Paul Ha-Yeon Cheong, Jacob C. Buchanan
Publikováno v:
Physical Review Research. 2
The sub-gap density of states of amorphous indium gallium zinc oxide ($a$-IGZO) is obtained using the ultrabroadband photoconduction (UBPC) response of thin-film transistors (TFTs). Density functional theory simulations classify the origin of the mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1948d9b8aefb30d6c2f659313c88a2c0
https://doi.org/10.1103/physrevresearch.2.033358
https://doi.org/10.1103/physrevresearch.2.033358
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a541e14a80a8f8f7c7ebd1e8c754dde
https://doi.org/10.1117/12.2536441
https://doi.org/10.1117/12.2536441
Autor:
John F. Wager, Matt W. Graham, Paul Ha-Yeon Cheong, George W. Mattson, Christopher E. Malmberg, Kyle T. Vogt
Publikováno v:
Oxide-based Materials and Devices XI.
Amorphous semiconducting transparent oxides like InGaZnO4 (a-IGZO) have a broad distribution of metal and oxygen vacancy defects that determine thin film transistor (TFT) characteristics and impact device reliability metrics such as hysteresis. Here,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b9a6f3dbef7e4b1c7d882fbd65a6e8d
https://doi.org/10.1117/12.2545439
https://doi.org/10.1117/12.2545439
Hydrogen Incorporation Modulates Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors
Publikováno v:
ECS Meeting Abstracts. :1079-1079
Incorporation of hydrogen into the channel layer of an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor leads to a negative shift in the transfer curve threshold voltage; the magnitude of the threshold voltage shift increases with in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16a5941e189e9b1b0db0bdc7d56f467c
https://doi.org/10.1149/ma2021-01331079mtgabs
https://doi.org/10.1149/ma2021-01331079mtgabs