Zobrazeno 1 - 10
of 10
pro vyhledávání: '"George Skoulatakis"'
Publikováno v:
Semiconductors. 54:543-553
Ge-based metal-oxide semiconductor structures exhibiting thin ALD-grown high-k dielectric HfO2 films were fabricated and characterized chemically, structurally, and electrically. X-ray photoelectron (XP) spectroscopy confirms the good stoichiometry o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d92d4e61c316ad77d00a11d90a824e8
https://doi.org/10.1134/s1063782620050036
https://doi.org/10.1134/s1063782620050036
Autor:
Antonios M. Douvas, Giorgos Papadimitropoulos, S. Kennou, I. Karystinos, Ioannis Kostis, Anastasia Soultati, Dimitris Davazoglou, Maria Vasilopoulou, George Skoulatakis
Publikováno v:
Thin Solid Films. 615:329-337
Hydrogenated sub-stoichiometric oxides exhibiting perovskite structure such as those of tungsten and of molybdenum (H:MOx, where M = W or Mo and x H bonds present in them only, without heating the rest of the lattice and the substrate. It was shown t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fd7990b48c5d6a81c39c630a60f48e5
https://doi.org/10.1016/j.tsf.2016.07.046
https://doi.org/10.1016/j.tsf.2016.07.046
Autor:
Stella Kennou, Angelika Balliou, George Skoulatakis, Giorgos Papadimitropoulos, Nikos Glezos, D. Davazoglou, Spiros Gardelis
Publikováno v:
ACS Applied Materials & Interfaces. 8:7212-7220
Transition-metal-oxide hybrids composed of high surface-to-volume ratio Ta2O5 matrices and a molecular analogue of transition metal oxides, tungsten polyoxometalates ([PW12O40](3-)), are introduced herein as a charge storage medium in molecular nonvo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c91993f0114e4ed2c431313a1c8e957
https://doi.org/10.1021/acsami.5b11204
https://doi.org/10.1021/acsami.5b11204
Autor:
Nikos Glezos, Angelika Balliou, Stella Kennou, George Skoulatakis, Jiří Pfleger, Samrana Kazim, J. Rakušan
Publikováno v:
physica status solidi (b). 253:1009-1019
Precision control of charge transport can provide a solid basis for the design of materials with novel properties. We report on the bottom-up fabrication and study of the electronic properties of molecular multijunction networks comprising ultrafine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c73e1f3d090288b6357e23a6df3dbba
https://doi.org/10.1002/pssb.201552547
https://doi.org/10.1002/pssb.201552547
Autor:
Stavroula N. Georga, George Skoulatakis, Panagiotis Svarnas, Martha A. Botzakaki, Christoforos A. Krontiras, S. Kennou, Spyridon Ladas, Christos Tsamis
Publikováno v:
Thin Solid Films. 599:49-53
It is well recognized that native oxide of germanium is hygroscopic and water soluble, while germanium dioxide is thermally unstable and it is converted to volatile germanium oxide at approximately 400 °C. Different techniques, implementing quite co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cb84aa888330fcd89e2a8263140cb6e
https://doi.org/10.1016/j.tsf.2015.12.049
https://doi.org/10.1016/j.tsf.2015.12.049
Autor:
George Skoulatakis, Nikos Glezos, J. Rakušan, Angelika Balliou, Samrana Kazim, Jiri Pfleger, Stella Kennou
Publikováno v:
NANOARCH
We propose and investigate a nanoscale multi-junction network architecture that can be configured on-flight to perform Boolean logic functions at room temperature. The device exploits the electronic properties of randomly deposited molecule-interconn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13c3bdda767700feb7ab284670f3aa95
https://doi.org/10.1145/3232195.3232225
https://doi.org/10.1145/3232195.3232225
Autor:
Dimitris Tsikritzis, George Skoulatakis, Guillaume Wantz, Frederic Guillain, Laurence Vignau, Stella Kennou
Publikováno v:
Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells, Elsevier, 2014, 122, pp.251-256
Solar Energy Materials and Solar Cells, Elsevier, 2014, 122, pp.251-256
Solution processing is mandatory to continue the development of large scale and low cost organic solar cells. Tungsten oxide (WO3) has shown good performance when used as a hole transporting layer in organic solar cells. Here this oxide has been depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d21368bbd333273ebd562725053a7055
https://doi.org/10.1016/j.solmat.2013.12.011
https://doi.org/10.1016/j.solmat.2013.12.011
Autor:
Angelika Balliou, Stella Kennou, George Skoulatakis, M. Bouroushian, Antonios M. Douvas, Nikos Glezos
Publikováno v:
Nanotechnology. 29:275204
All-inorganic self-arranged molecular transition metal oxide hyperstructures based on polyoxometalate molecules (POMs) are fabricated and tested as electronically tunable components in emerging electronic devices. POM hyperstructures reveal great pot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e5a09a6d8270a89516b8ece5468428b
https://doi.org/10.1088/1361-6528/aabdc3
https://doi.org/10.1088/1361-6528/aabdc3
Autor:
Christos Tsamis, Violetta Gianneta, Martha A. Botzakaki, Stavroula N. Georga, Eleni Makarona, Christoforos A. Krontiras, George Skoulatakis, Anastasios Travlos, N. Xanthopoulos, Spyridon Ladas, Stella Kennou
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 36:01A120
The influence of deposition temperature on the structural, chemical, and electrical properties of atomic layer deposition (ALD)-Al2O3 thin films is investigated. ALD-Al2O3 films were deposited on p-type Ge substrates at 80, 150, 200, 250, and 300 °C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40400e4647dc16a314d7142d58ca0c6a
https://doi.org/10.1116/1.5003375
https://doi.org/10.1116/1.5003375
Autor:
Christos Tsamis, Stella Kennou, George Skoulatakis, Christoforos A. Krontiras, Stavroula N. Georga, Spyridon Ladas, Martha A. Botzakaki
Publikováno v:
Journal of Physics D: Applied Physics. 49:385104
It is well known that the most critical issue in Ge CMOS technology is the successful growth of high-k gate dielectrics on Ge substrates. The high interface quality of Ge/high-k dielectric is connected with advanced electrical responses of Ge based M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d2f499356cc0a6972370b4395c9406e
https://doi.org/10.1088/0022-3727/49/38/385104
https://doi.org/10.1088/0022-3727/49/38/385104