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pro vyhledávání: '"George Robert Mulfinger"'
Autor:
Ömür Işıl Aydin, Judson Robert Holt, Laks Vanamurthy, Thomas Feudel, Cyrille Le Royer, Tobias Heyne, Ralf Gerber, Markus Lenski, George Robert Mulfinger, Timothy J McArdle, Sören Jansen, Dirk Utess, Christoph Klein, Anita Peeva, David Barge, Alexis Divay, Steffen Lehmann, Elliot Smith, Carsten Peters, Jens-Uwe Sachse
Publikováno v:
ECS Meeting Abstracts. :1072-1072
Recently, a 22nm fully depleted gate-first SOI technology (FDSOI) has shown significant promise as a low-cost alternative to FinFETs with devices that are tunable between low-leakage and high-performance regimes. [1] The 22nm FDSOI PFET utilizes a Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b7276ffa88fa0c2f0ac48deaf01e592
https://doi.org/10.1149/ma2018-02/31/1072
https://doi.org/10.1149/ma2018-02/31/1072
