Zobrazeno 1 - 10
of 14
pro vyhledávání: '"George R. Misium"'
Autor:
George R. Misium
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1642-1647
This paper describes a macroscopic model of parallel‐plate, radio frequency (rf), oxygen plasma discharges. The model predicts fundamental plasma characteristics as a function of controllable parameters such as pressure, power, and electrode spacin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71530dcb42b9803e54629c5abe0c391b
https://doi.org/10.1116/1.576779
https://doi.org/10.1116/1.576779
Autor:
Thomas R. Seha, George R. Misium
Publikováno v:
SPIE Proceedings.
This paper preseni3 an experimental evaluation of defect generation and device damage in dry develop lithography a compared to 3tandard -wet develop- lithography. A 3tandard g-line process and the DESIRE® process were compared. Defect generation wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::113cb01628ccfa274a74110e78cfc115
https://doi.org/10.1117/12.20030
https://doi.org/10.1117/12.20030
Publikováno v:
SPIE Proceedings.
This paper describes a study of the silylation characteristics of different resists that are suitable forsingle-layer, surface-imaging patterning applications. In particular, the effect of different processparameters on the silicon diffusion in UCB's
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da9395cbe98fcb896b3468fdfddc198a
https://doi.org/10.1117/12.20091
https://doi.org/10.1117/12.20091
Publikováno v:
SPIE Proceedings.
This paper describes the application of reactive ion etching to submicron single-layer lithography. It is shown that the etch selectivity of silicon containing resists is a strong function of the ion energy; that is, the selectivity increases for low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cccec3a816ab0ed25327b3b60164498
https://doi.org/10.1117/12.978044
https://doi.org/10.1117/12.978044
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:1749
This paper discusses the use of surface imaging lithography for deep UV step and repeat applications. In particular, results obtained using the DESIRE process are presented. It is shown that surface imaging is a very attractive option for 248 nm lith
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b92ee054e022a83776bf182d87e16bc
https://doi.org/10.1116/1.585152
https://doi.org/10.1116/1.585152
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:1740
This paper discusses the application of a deep wafer stepper and associated photoresist systems to advanced semiconductor processing. It is shown that, even with the limited number of photoresists available, deep UV lithography is a viable candidate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbbbd83007e196fa5bdcf70309c810ad
https://doi.org/10.1116/1.585150
https://doi.org/10.1116/1.585150
Publikováno v:
Advances in Resist Technology and Processing VI.
Surface-imaging schemes are an attractive alternative to overcome many of the limitations optical microlithography is presently facing. A good example of this type of approach is the so-called DESIRE process. A preliminary performance characterizatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fa576b6a30c3041588f82904dfffc63
https://doi.org/10.1117/12.953034
https://doi.org/10.1117/12.953034
Autor:
Misium, George R.
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1990, Vol. 8 Issue 3, p1642-1647, 6p
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Conference
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