Zobrazeno 1 - 6
of 6
pro vyhledávání: '"George Petkos"'
Autor:
Keith Heppenstall, Ian Kennedy, Philip Rutter, Olayiwola Alatise, Jim Parkin, Khalid Khan, Adrian Koh, George Petkos
Publikováno v:
IEEE Transactions on Electron Devices. 57:1651-1658
The impact of hot-carrier injection (HCI) due to repetitive unclamped inductive switching (UIS) on the electrical performance of low-voltage trench power n-type MOSFETs (nMOSFETs) is assessed. Trench power nMOSFETs with 20- and 30-V breakdown voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::052644a82ba735d4fccb1a206e0b48f4
https://doi.org/10.1109/ted.2010.2049062
https://doi.org/10.1109/ted.2010.2049062
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 10:123-129
The high-temperature electrothermal stability and linear-mode robustness of low-voltage discrete power trench MOSFETs are assessed. The linear-mode robustness is shown to be dependent on the positive temperature coefficient of the subthreshold diffus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c90ddef3a3286ec1d37c0a0ccce6989
https://doi.org/10.1109/tdmr.2009.2036001
https://doi.org/10.1109/tdmr.2009.2036001
Autor:
Keith Heppenstall, Ian Kennedy, George Petkos, Adrian Koh, Phil Rutter, Olayiwola Alatise, Khalid Khan, Jim Parkin
Publikováno v:
IEEE Electron Device Letters. 31:713-715
Threshold voltage reduction from hot-hole injection during repetitive unclamped inductive switching is investigated in low-voltage discrete power trench nMOSFETs with different trench depths. Power nMOSFETs with 21 mm2 of active area, breakdown volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc2cfd6af786c3e35148ee1ffbdecf6a
https://doi.org/10.1109/led.2010.2048994
https://doi.org/10.1109/led.2010.2048994
Autor:
Michael R. Jennings, Nii-Adotei Parker-Allotey, George Petkos, Phil Mawby, Olayiwola Alatise, Ian Kennedy
Publikováno v:
2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).
Power losses are investigated in trench MOSFETs as functions of trench depth and switching frequency. MOSFETs with different trench depths are fabricated and characterized. Measurements show that gate charge and capacitance increases with trench dept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa3e4b17fdff3ed1ed8ec80ea4c27389
https://doi.org/10.1109/essderc.2011.6044177
https://doi.org/10.1109/essderc.2011.6044177
Autor:
Adrian Koh, George Petkos, Phil Rutter, Olayiwola Alatise, Ian Kennedy, Khalid Khan, Keith Heppenstall, Jim Parkin
Publikováno v:
2010 Proceedings of the European Solid State Device Research Conference.
Low voltage discrete power trench n-MOSFETs in TO-220 packages have been subjected to over 200 million cycles of repetitive unclamped inductive switching (UIS) at a mounting base temperature of 150° C and at different avalanche currents. Hot-hole in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9749a03830800b2fbcc376b3c3310647
https://doi.org/10.1109/essderc.2010.5618365
https://doi.org/10.1109/essderc.2010.5618365
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
The capability of 20V trench power MOSFETs to withstand high current repetitive avalanche events has been investigated. Automotive standard 20V BVdss rated MOSFETs with active area of 21mm2 have been successfully subjected with up to 300 million 59µ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35210a64b9847e2470b7a09233845fd9
https://doi.org/10.1109/ispsd.2009.5158014
https://doi.org/10.1109/ispsd.2009.5158014