Zobrazeno 1 - 3
of 3
pro vyhledávání: '"George P. Imthurn"'
Autor:
George. P. Imthurn
Publikováno v:
2009 IEEE International SOI Conference.
Silicon-on-Sapphire (SOS) was invented in 1961 and as such is the first of the SOI technologies. Its original purpose was to provide radiation tolerant circuits for satellites and missiles. Now, SOS is ready to displace gallium arsenide (GaAs) as the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9b8ebf70384fce51653e78f6bb0c16b
https://doi.org/10.1109/soi.2009.5318759
https://doi.org/10.1109/soi.2009.5318759
Publikováno v:
SPIE Proceedings.
A 6.6 Gb/s, 1:8 optoelectronic (OE) time demultiplexer was implemented with InP metal-semiconductor-metal switches. These switches were activated sequentially by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::177622966e4c32579737e57c1d11f879
https://doi.org/10.1117/12.175284
https://doi.org/10.1117/12.175284
Publikováno v:
Journal of Applied Physics. 72:2526-2527
Silicon‐on‐sapphire (SOS) has been prepared by direct wafer bonding. The silicon layer was thinned to about 10 μm by mechanical grinding and chemical etching. P‐N junction diodes were fabricated in the bonded SOS and compared with epitaxially
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b3d77f22f83fadced122b8b0079ea8a
https://doi.org/10.1063/1.352345
https://doi.org/10.1063/1.352345