Zobrazeno 1 - 10
of 12
pro vyhledávání: '"George G. Totir"'
Autor:
Holt Bui, Matthew Copel, Damon B. Farmer, G. Fraczak, Charles Tabachnick, John A. Ott, Teodor K. Todorov, George G. Totir, Marinus Hopstaken
Publikováno v:
Chemistry of Materials. 33:2267-2273
Atomic layer deposition of tungsten oxide thin films using bis(t-butylimido)-bis(dimethylamido)tungsten is investigated using various oxygen precursors. Significant amounts of unreacted nitrogen or...
Autor:
John M. Papalia, George G. Totir, Sebastian Engelmann, Hiroyuki Miyazoe, Damon B. Farmer, L. Buzi, Hongwen Yan, Nathan P. Marchack
Publikováno v:
Journal of Applied Physics. 130:080901
The scientific study of plasma discharges and their material interactions has been crucial to the development of semiconductor process engineering and, by extension, the entire microelectronics industry. In recent years, the proliferation of the big
Autor:
George G. Totir, Matthew Kern, Ronald A. DellaGuardia, Kim van Berkel, Emanuel I. Cooper, Bang To, Ronald W. Nunes, Makonnen Payne, Siegfried L. Maurer, Mahmoud Khojasteh
Publikováno v:
Solid State Phenomena. 187:101-104
An all-wet process based on a novel chemistry has been developed to enable the removal of high-dose implanted photoresist in the presence of exposed metal layers and other materials typical of advanced gate stacks.
Autor:
Thierry Conard, P. Mertens, George G. Totir, Els Kesters, Martine Delande, Stephane Malhouitre, Karine Kenis, Souvik Banerjee, Quoc Toan Le, Guy Vereecke, Twan Bearda, Leonardus H. A. Leunissen, Ilse Hoflijk, Rita Vos, G. Mannaert, Sophia Arnauts, Martin M. Frank, Marcel Lux
Publikováno v:
ECS Transactions. 11:219-226
A combination of wet chemistry and high-velocity solid CO2 aerosol pre-treatment was used to remove ion-implanted resist from patterned Si structures. The top resist surface is modified by heavy ion-implantation forming a crust ~100nm thick. The aero
Publikováno v:
Surface Science. 600:665-674
The surface chemistry of CBr 2 Cl 2 on the Fe 3 O 4 (1 1 1)–(2 × 2) selvedge of single-crystal α-Fe 2 O 3 (0 0 0 1) has been investigated using temperature programmed reaction and desorption (TPR/D) measurements. The spectra obtained in this case
Publikováno v:
Journal of Electroanalytical Chemistry. 532:151-156
The reactivity of copper toward liquid anhydrous hydrofluoric acid (AHF) has been examined using ex situ X-ray photoelectron spectroscopy (XPS). Exposure of either oxide-free or air-oxidized Cu surfaces to AHF yielded XPS spectra consistent with the
Autor:
Dana A. Totir, George G. Totir, Yu Luo, Lin Feng Li, Gary S. Chottiner, Daniel Alberto Scherson
Publikováno v:
The Journal of Physical Chemistry B. 103:164-168
The electrochemical properties of clean aluminum in LiClO{sub 4}(PEO) solutions have been investigated in ultrahigh vacuum using as electrodes both foils and thin films vapor deposited on boron-doped diamond (BDD) layers supported on Si substrates. V
Autor:
George G. Totir, James Vichiconti, Stephen M. Rossnagel, J. Newbury, Keith T. Kwietniak, Nicholas C. M. Fuller, Jakub Nalaskowski, Deborah A. Neumayer, Satyavolu S. Papa Rao, A. Pyzyna, Jun Liu, Kate Fisher, Qiang Huang
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
Photovoltaic devices were fabricated at IBM TJ Watson Research Center using a research line designed to run different substrate types concurrently. The process knowledge gained from CMOS IC fabrication is applied to solar cell fabrication to create c
Autor:
Christopher M. Molella, Jochonia Nxumalo, Jun Liu, John M. Cotte, George G. Totir, Lukasz J. Hupka, Laura L. Kosbar, Jakub Nalaskowski, Marinus Hopstaken, Kathryn C. Fisher
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
Scanning capacitance microscopy (SCM) has been used to generate two dimensional images of emitters formed using various doping techniques on polished and textured silicon photovoltaic cells. SCM has the advantage of high spatial resolution and sensit
Autor:
George G. Totir, Martin Frank, Rita Vos, Sophia Arnauts, Twan Bearda, Karine Kenis, Martine Delande, QuocToan Le, Els Kesters, Guy Vereecke, Geert Mannaert, Marcel Lux, Ilse Hoflijk, Thierry Conard, Souvik Banerjee, Stephane Malhouitre, Leonardus H.A. Leunissen, P. Mertens
Publikováno v:
ECS Meeting Abstracts. :1035-1035
not Available.