Zobrazeno 1 - 10
of 80
pro vyhledávání: '"George G. Kleiman"'
Autor:
Richard Landers, George G. Kleiman, Marcelo Falsarella Carazzolle, A. Pancotti, Abner de Siervo
Publikováno v:
Repositório da Produção Científica e Intelectual da Unicamp
Universidade Estadual de Campinas (UNICAMP)
instacron:UNICAMP
Universidade Estadual de Campinas (UNICAMP)
instacron:UNICAMP
Agradecimentos: The authors would like to thank FAPESP, CNPq, CAPES and LNLS of Brasil for support Abstract: We present X-ray photoelectron spectroscopy (XPS) and X-ray photoelectron diffraction (XPD) investigations of ordered chromium oxide ultrathi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6fa4602d19089e4be9197c61666be0c
https://doi.org/10.1007/s11244-011-9628-7
https://doi.org/10.1007/s11244-011-9628-7
Autor:
George G. Kleiman, A. Pancotti, Marcelo Falsarella Carazzolle, Richard Landers, Pedro A. P. Nascente, Denise A. Tallarico, A. de Siervo
Publikováno v:
Topics in Catalysis. 54:70-76
Ultra-thin films (1 and 3 monolayers) of Pd were deposited on the Au(111) surface and then characterized by X-ray photoelectron spectroscopy (XPS), X-ray excited Auger spectroscopy (XAES), low-energy electron diffraction (LEED), and X-ray photoelectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0da29ad667223d495a32a7bb60d8126b
https://doi.org/10.1007/s11244-011-9649-2
https://doi.org/10.1007/s11244-011-9649-2
Autor:
George G. Kleiman, Carsten Westphal, A. de Siervo, Marcelo Falsarella Carazzolle, M. Schürmann, S. Dreiner, Richard Landers, C.R. Flüchter, D. Weier, A. Beimborn
Publikováno v:
Surface Science. 602:3647-3653
We propose a modified zirconium silicide model for the structure of HfSi2 islands on Si(1 0 0). We studied this system in a combined investigation by means of photoelectron diffraction (XPD), photoelectron spectroscopy and atomic force microscopy. Sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::786a1500a3361fe13d60a6ffb299f353
https://doi.org/10.1016/j.susc.2008.09.033
https://doi.org/10.1016/j.susc.2008.09.033
Autor:
S.S. Maluf, Richard Landers, George G. Kleiman, Pedro A. P. Nascente, A. de Siervo, Marcelo Falsarella Carazzolle
Publikováno v:
Journal of Molecular Catalysis A: Chemical. 281:3-8
We report studies of ultra-thin films of Pd and Ni deposited on Ni(1 1 1) and Pd(1 1 1) surfaces, respectively, using X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED), and X-ray photoelectron diffraction (XPD). For a 1.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e72abd573320208da2ede993b2be220
https://doi.org/10.1016/j.molcata.2007.09.021
https://doi.org/10.1016/j.molcata.2007.09.021
Autor:
George G. Kleiman, Richard Landers, A. Pancotti, Marcelo Falsarella Carazzolle, A. de Siervo, Edmar A. Soares
Publikováno v:
Journal of Molecular Catalysis A: Chemical. 281:9-13
Photoemission spectra collected over a large solid angle give information about the form and energies of spectral features, which are related to the underlying electronic structure of the sample. Spectra measured as a function of exit angle reflect t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc18450ee30eb2c815a28db97d624228
https://doi.org/10.1016/j.molcata.2007.08.011
https://doi.org/10.1016/j.molcata.2007.08.011
Autor:
Pedro A. P. Nascente, George G. Kleiman, Richard Landers, A. de Siervo, S.S. Maluf, Marcelo Falsarella Carazzolle
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :405-408
Ultra-thin nickel films deposited on the Pd(111) surface were characterized by X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED), and X-ray photoelectron diffraction (XPD). Up to 3 ML coverage, a LEED (1 × 1) pattern wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88fdb542d3aec4654160ea9d65a09b4e
https://doi.org/10.1016/j.elspec.2006.11.052
https://doi.org/10.1016/j.elspec.2006.11.052
Autor:
C. Flüchter, Richard Landers, M. Schürmann, George G. Kleiman, Carsten Westphal, U. Berges, D. Weier, A. de Siervo, Marcelo Falsarella Carazzolle
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :xx-civ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9f76d0d7e2b93cc95c81a1c83767139
https://doi.org/10.1016/s0368-2048(07)00147-8
https://doi.org/10.1016/s0368-2048(07)00147-8
Autor:
U. Berges, M. Schürmann, D. Weier, A. de Siervo, Marcelo Falsarella Carazzolle, George G. Kleiman, Carsten Westphal, S. Dreiner, C.R. Flüchter, Richard Landers
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :92-96
In order to increase the switching speed and the efficiency of modern semiconductor devices a further down scaling is desired. Thus, the SiO 2 gate dielectric might be replaced by layers of a material with a much higher dielectric constant like HfO 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e801c3a2373b2d3a14ecc84ebb99a1c9
https://doi.org/10.1016/j.elspec.2006.11.028
https://doi.org/10.1016/j.elspec.2006.11.028
Autor:
D. Weier, A. de Siervo, Carsten Westphal, M. Schürmann, Richard Landers, George G. Kleiman, M.F. Carazzolle, U. Berges, C.R. Flüchter
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :393-397
In this work, we present a systematic electronic and structural study of the Hf-silicide formation upon annealing on Si(1 1 1) surface. The electronic structure and surface composition were determined by X-ray photoelectron spectroscopy (XPS) and ang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f153ab7701ce09ef5b53b294fe0d033
https://doi.org/10.1016/j.elspec.2006.12.062
https://doi.org/10.1016/j.elspec.2006.12.062
Autor:
S. Dreiner, Richard Landers, George G. Kleiman, C. Westphal, A. de Siervo, A. Pancotti, D. Weier, Marcelo Falsarella Carazzolle, M. Schürmann, U. Berges, C. Flüchter
Publikováno v:
Materials Science in Semiconductor Processing. 9:1055-1060
Continuous down-scaling of silicon based transistors results in device lengths of less than 100 nm. This requires a reduction of the gate dielectric thickness to less than 15A which is not possible for SiO 2 due to an increasing leakage current. One
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d897d222dca9f080231b881bc425d245
https://doi.org/10.1016/j.mssp.2006.10.023
https://doi.org/10.1016/j.mssp.2006.10.023