Zobrazeno 1 - 10
of 39
pro vyhledávání: '"George G. Harman"'
Autor:
Christian E. Johnson, George G. Harman
Publikováno v:
IEEE Transactions on Components and Packaging Technologies. 25:677-683
There are three areas to consider when designing/implementing wire bonding to advanced ULSI damascene-copper chips having copper metallization and low dielectric-constant polymers embedded beneath them (Cu/LoK). These are: 1) the copper-pad top-surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e472291cda91f22353ad9a169469c72b
https://doi.org/10.1109/tcapt.2002.808008
https://doi.org/10.1109/tcapt.2002.808008
Autor:
George G. Harman
Publikováno v:
Micro-and Opto-Electronic Materials and Structures: Physics, Mechanics, Design, Reliability, Packaging ISBN: 9780387279749
The material properties and requirements for wire bond and flip chip interconnections that can be used in packaging chips for extreme high and low temperature environments [from +460°C (HTE) down to −200°C (LTE)] are described. The most commonly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b90f74f529acfe6d9e1324cf6efeb33c
https://doi.org/10.1007/0-387-32989-7_24
https://doi.org/10.1007/0-387-32989-7_24
Autor:
George G. Harman
Publikováno v:
1992 Proceedings 42nd Electronic Components & Technology Conference.
The leading edge of semiconductor manufacturing is the high yield production of semiconductor devices with high lead counts and fine pitch. The packaging of these chips has become as challenging as the silicon manufacturing itself. The object of this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ccb151131e9a2e3debdec9b9094b720
https://doi.org/10.1109/ectc.1992.204314
https://doi.org/10.1109/ectc.1992.204314
Autor:
George G. Harman
Publikováno v:
Multichip Modules with Integrated Sensors ISBN: 9789401066310
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5129041eb9f062875aa6d2a4101e8f17
https://doi.org/10.1007/978-94-009-0323-4_7
https://doi.org/10.1007/978-94-009-0323-4_7
Autor:
George G. Harman NIST Fellow
Publikováno v:
Microelectronics Reliability. 51:3-3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee3e72879dd7bb5d9531beb47904ebe0
https://doi.org/10.1016/j.microrel.2010.12.003
https://doi.org/10.1016/j.microrel.2010.12.003
Publikováno v:
Journal of Applied Physics. 34:380-383
A new method of studying the surface states of silicon is described. Essentially it involves applying porous graphite contacts to p‐type silicon and exposing the samples to various inversion‐layer producing gaseous ambients. A voltage pulse is ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0116cc73e5bbe0201dfee87066909f0
https://doi.org/10.1063/1.1702616
https://doi.org/10.1063/1.1702616
Autor:
George G. Harman
Publikováno v:
Physical Review. 111:27-33
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d73376b8bb9291dc3ab8824cc66d03b5
https://doi.org/10.1103/physrev.111.27
https://doi.org/10.1103/physrev.111.27
Autor:
George G. Harman, Theodore Higier
Publikováno v:
Journal of Applied Physics. 33:2198-2206
The surface and bulk properties of semiconductors have been studied by a two‐terminal method using dirty contacts. These contacts are defined as ones that are easily applied and removed and that are separated from the bulk by surface states, oxides
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55ddc92371f024fa1eeb910ef4be403a
https://doi.org/10.1063/1.1728927
https://doi.org/10.1063/1.1728927