A New Breed of Wet-Developable BARC Materials

Autor: Kevin O'Shea, Yoshihiro Yamamoto, Jin Wuk Sung, Libor Vyklicky, Pushkara Rao Varanasi, George G. Barclay, Irene Popova, James F. Cameron, Jason A. DeSISTO, Manabu Hidano, Johan Amara, David Valeri, Vaishali R. Vohra, Greg Prokopowicz, Adam Ware, Tomoki Kurihara, Kathleen M. O'Connell, Wu-Song Huang

Publikováno v: Journal of Photopolymer Science and Technology. 22:17-24

A new family of materials has been developed to serve as a wet-developable bottom antireflective coating (D-BARC) for patterning levels that have a strong need to avoid dry-etch processes for BARC-open steps. Such include some implant levels, where d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::82c1c025ab30f31631633756506e17c2
https://doi.org/10.2494/photopolymer.22.17

Resists for next generation lithography

Autor: Leonidas E. Ocola, Robert L. Brainard, George G. Barclay, Erik H. Anderson

Publikováno v: Brainard, Robert L.; Barclay, George G.; Anderson, Erik H.; & Ocola, Leonidas E.(2001). Resists for next generation lithography. Lawrence Berkeley National Laboratory. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/0v6799mg

Four next generation lithographic options (EUV, X-ray, EPL, IPL) are compared against four current optical technologies (i-line, DUV, 193 nm, 157 nm) for resolution capabilities based on wavelength. Studies are also made comparing absorption characte

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::125651e4f2335ae51779665bc99174ec
https://doi.org/10.1016/s0167-9317(02)00564-6

A Novel Platform for Production-worthy ArF Resist

Autor: Joo-Tae Moon, Dong-Won Jung, Tsutomu Tanaka, Sung-Ho Lee, Yool Kang, Sook Lee, Hyun-Woo Kim, Joe Mattia, Timothy G. Adams, Sang-Jun Choi, George G. Barclay, Sang-Gyun Woo, Stefan J. Caporale, Doris Kang, George W. Orsula, Robert J. Kavanagh

Publikováno v: Journal of Photopolymer Science and Technology. 14:363-371

ArF lithography, in combination with chemically amplified resists, has been investigated as one of the most promising technologies for producing patterns below 100nm. In considering the polymer matrix for 193nm photoresist applications, factors such

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::41847cad5b678807206fa83e102c0ca8
https://doi.org/10.2494/photopolymer.14.363

The 'Living' Free Radical Synthesis of Poly(4-hydroxystyrene): Physical Properties and Dissolution Behavior

Autor: Roger F. Sinta, Craig J. Hawker, George G. Barclay, A. Orellana, Patrick R. L. Malenfant, Hiroshi Ito

Publikováno v: Macromolecules. 31:1024-1031

The synthesis of a range of narrow polydispersity, well-defined poly(4-hydroxystyrene)s via a “living” radical polymerization technique is reported. The synthetic route chosen involves the 2,2,6,6-...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bb684b189414520978dd9b43f6647a8c
https://doi.org/10.1021/ma961129p

High scan speed EBL containing contact hole resists with low defectivity

Autor: Rick Hardy, George G. Barclay, Chun Chi Yu, Kathleen M. O'Connell, Tom Estelle, Mingqi Li, Lian Cong Liu, Deyan Wang, Tsung Ju Yeh, Wei-Sheng Chen, Cheng-Bai Xu, Yeh-Sheng Lin, Chia Hung Lin, Peter Trefonas, Chunfeng Guo, Che-Yi Lin

Publikováno v: SPIE Proceedings.

In the previous paper we discussed the relationship between blob defect count and the receding angle of a resist surface after development with an alkaline developer solution. This paper summarizes additional test results from our continued efforts i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::234a69e0f18dba54b60ef90bbf84a8a2
https://doi.org/10.1117/12.2011537