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pro vyhledávání: '"George Domingo"'
Autor:
George Domingo
An accessible guide to how semiconductor electronics work and how they are manufactured, for professionals and interested readers with no electronics engineering background Semiconductor Basics is an accessible guide to how semiconductors work. It is
Autor:
Richard A. M. Lee, Robert E. McMurray, George Domingo, Hyung Cho, Mark E. McKelvey, Michael E. Ressler, John J. Drab, Kalyani G. Sukhatme, Jessie L. Dotson
Publikováno v:
SPIE Proceedings.
The Mid-Infrared Instrument (MIRI) is a 5 to 28 micron imager and spectrometer that is slated to fly aboard the JWST in 2013. Each of the flight arrays is a 1024x1024 pixel Si:As impurity band conductor detector array, developed by Raytheon Vision Sy
Autor:
Alan W. Hoffman, Judith L. Pipher, Joseph P. Rosbeck, D. Rapchun, W. Y. Lum, James D. Garnett, Danny J. Krebs, Murzy D. Jhabvala, R. Benson, William J. Forrest, G. Mark Cushman, George Domingo, W. J. Glaccum, Nancy A. Lum
Publikováno v:
Infrared Spaceborne Remote Sensing VIII.
SIRTF requires detector arrays with extremely high sensitivity, limited only by the background irradiance. Especially critical is the near infrared spectral region around 3 micrometers , where the detector current due to the zodiacal background is a
Autor:
Robert E. McMurray, James D. Garnett, Alan W. Hoffman, Nancy A. Lum, John E. Venzon, Kevin Sparkman, Roy R. Johnson, John A. Estrada, S. Zins, Craig R. McCreight, Steven Lawrence Solomon, George Domingo, Peter J. Love, Mark E. McKelvey, Arnold D. Estrada, R. Mchugh, George R. Chapman
Publikováno v:
SPIE Proceedings.
Raytheon/SBRC has demonstrated high quality Si:As IBC IR FPAs for both ground-based and space-based Mid-IR astronomy applications. These arrays offer in-band quantum efficiencies of approximately 50 percent over a wavelength range from 6 micrometers
Publikováno v:
SPIE Proceedings.
Hughes has designed a large-area staring Si:As impurity band conduction (IBC) focal plane array specifically for high-background longwave infrared (LWIR) astronomy applications. We derived the design parameters by surveying leading astronomers for th
Publikováno v:
Review of Scientific Instruments. 46:147-151
A new instrument which electrically characterizes devices and materials at high voltages applied for short duration at low repetition rates is described. The instrument automatically measures and plots I−V or J−E sample and device characteristics
Publikováno v:
Journal of Applied Physics. 48:3156-3158
N‐ or S‐type switching in the I‐V characteristics of semiconductor resistive bars immersed in liquid nitrogen occur if the I2R power per surface area generated in the semiconductor exceeds a certain threshold value. Such switching has been cons
Autor:
George Domingo
Publikováno v:
American Journal of Physics. 46:691-692
The method to calculate the Thevenin (or Norton) equivalent circuit of networks containing controlled current and/or voltage sources is identical to the method used with purely passive circuits if the fundamental concept of equivalence of networks is
Conference
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