Zobrazeno 1 - 10
of 27
pro vyhledávání: '"George Bryce"'
Autor:
Aaron Thean, Eddy Simoen, T. Vandeweyer, S. Locorotondo, Nadine Collaert, Anne S. Verhulst, Andriy Hikavyy, Roger Loo, Katia Devriendt, Anne Vandooren, George Bryce, Rita Rooyackers, Marc Demand, Cedric Huyghebaert, Amey Mahadev Walke
Publikováno v:
IEEE Transactions on Electron Devices. 61:4032-4039
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a590d17fe287e08674d95f091e5eaef7
https://doi.org/10.1109/ted.2014.2365142
https://doi.org/10.1109/ted.2014.2365142
Autor:
Maaike Op de Beeck, Deniz Sabuncuoglu Tezcan, Harold Dekkers, George Bryce, Karen Qian, Rita Verbeeck, Karl Malachowski
Publikováno v:
International Symposium on Microelectronics. 2012:000148-000153
Material selection is the key issue when developing a biocompatible packaging process for implantable electronic systems. To secure a reliable performance of the chip in such a package, its encapsulation has to be considered up-front in the wafer-lev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efe22dd11e20ff0b53a2cfdcbcbd457b
https://doi.org/10.4071/isom-2012-ta51
https://doi.org/10.4071/isom-2012-ta51
Publikováno v:
Microelectronic Engineering. 88:2420-2423
Poly-SiGe can be used to process Micro Electro-Mechanical Systems (MEMS) directly above standard CMOS. In this work, the use of different surface pre-treatments, such as a CF"4 clean or a Ti/TiN metallic interlayer, to remove unwanted interfacial oxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42e715ece805e594d9e430566f34d875
https://doi.org/10.1016/j.mee.2011.02.078
https://doi.org/10.1016/j.mee.2011.02.078
Autor:
George Bryce, Annemie Van Ammel, Yann Civale, Silvia Armini, Tanya Atanasova, Alain Moussa, Alex Radisic, Wouter Ruythooren, Kris Vanstreels, Christopher J. Wilson, Alexis Franquet, Zaid El-Mekki
Publikováno v:
ECS Transactions. 28:77-87
The results of a wet alkaline seed deposition process directly on barrier layers or thin adhesion promoter films, such as CVD Co are presented. This solution has been successfully used for copper plating on blanket and patterned Though Silicon Via (T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea628f64e5895bfca0fe4228751dd7a2
https://doi.org/10.1149/1.3502446
https://doi.org/10.1149/1.3502446
Autor:
Agnes Verbist, Bert Du Bois, Dries Van Thourhout, Ann Witvrouw, Jeroen De Coster, Rita Van Hoof, Haris Osman, Roel Beernaert, Herbert De Smet, George Bryce, Robert Puers, Simone Severi, Lianggong Wen, Luc Haspeslagh, S. Rudra
Publikováno v:
ECS Transactions. 33:799-812
In imec's 200mm fab a dedicated poly-SiGe above-IC MEMS (Micro Electro-Mechanical Systems) platform has been set up to integrate MEMS and its readout and driving electronics on one chip. In the Flemish project Gemini the possibilities of this platfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09e58ddd67d2bbfed5363fc7c2ca1c0f
https://doi.org/10.1149/1.3487610
https://doi.org/10.1149/1.3487610
Autor:
Rita Van Hoof, Stefaan Decoutere, George Bryce, Bert Du Bois, Ann Witvrouw, Gert Claes, Simone Severi, Myriam Willegems, Luc Haspeslagh
Publikováno v:
ECS Transactions. 16:353-364
Poly-crystalline Silicon-Germanium is a promising structural material for post-processing Micro Electro-Mechanical Systems (MEMS) above CMOS due to its excellent mechanical and electrical properties when deposited at CMOS compatible temperatures. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45249fd88d9ed7904d6690db63357870
https://doi.org/10.1149/1.2986794
https://doi.org/10.1149/1.2986794
Autor:
Roger Loo, Anne Vandooren, Cedric Huyghebaert, Andriy Hikavyy, Marc Demand, Katia Devriendt, T. Vandeweyer, Rita Rooyackers, George Bryce, S. Locorotondo, Nadine Collaert, Anne S. Verhulst, A. Walke, Aaron Thean
Publikováno v:
2013 IEEE International Electron Devices Meeting.
This paper presents a new integration scheme for complementary hetero-junction vertical Tunnel FETs (VTFETs), whereby a sacrificial source layer is used during the device fabrication and replaced by the final hetero-source materials, respectively for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::248c97b60f620bfe930cf1b7412bf54d
https://doi.org/10.1109/iedm.2013.6724558
https://doi.org/10.1109/iedm.2013.6724558
Autor:
Deniz Sabuncuoglu Tezcan, Nga P. Pham, Maarten Rosmeulen, Haris Osman, Bivragh Majeed, George Bryce
Publikováno v:
2012 IEEE 14th Electronics Packaging Technology Conference (EPTC).
This paper investigates the wafer bow induced during the substrate transfer process for GaN LED on Si (111) 8 inch wafers. The substrate transfer process is to transfer the thin GaN LED device layer to a carrier wafer using a CuSnCu permanent bonding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc228c84a9746bb98c29e92a073ec500
https://doi.org/10.1109/eptc.2012.6507078
https://doi.org/10.1109/eptc.2012.6507078
Publikováno v:
2012 IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS).
Capacitive micromachined ultrasound transducers (CMUT) have the potential to enable 3-D ultrasound imaging. This paper reports a novel manufacturable buildup of a CMUT device which is CMOS compatible. The approach allows high density integration and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4f8a58b0d05c3f9fc14cf3f942a14d1
https://doi.org/10.1109/memsys.2012.6170155
https://doi.org/10.1109/memsys.2012.6170155
Autor:
S. Rudra, D. Van Thourhout, Ann Witvrouw, J. De Coster, R Van Hoof, Simone Severi, George Bryce
Publikováno v:
SENSORS AND ACTUATORS A-PHYSICAL
Grating light valve (GLV) display pixels are reflection type diffraction gratings consisting of electrostatically movable coplanar microbeams. Once actuated, the alternate movable beams deflect downwards which produces controlled diffraction of light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50b95a109e4c5b580744c8ec77348025
https://hdl.handle.net/1854/LU-2989116
https://hdl.handle.net/1854/LU-2989116
