Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Georg Tempel"'
Autor:
Andrea Siviero, Massimo Atti, Piero Olivo, Matthias Bauer, Gert Koebernik, Georg Tempel, Fabrizio Di Tano, Francesco Paolo Pistone, Cristian Zambelli, Rudolf Ullmann
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 14:66-73
The erratic bits (EB) phenomenon in nonvolatile memory devices (NVMs) has been evidenced in several technologies as a main reliability detractor. Usually, this issue is handled by repair strategies, which spans from static redundancy to dynamic corre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6fe9a642e9bcdb00d7cadf93ac8c8f23
https://doi.org/10.1109/tdmr.2013.2284639
https://doi.org/10.1109/tdmr.2013.2284639
Autor:
Georg Tempel
Publikováno v:
IRPS
Embedded non-volatile memories (NVM) use extensively designed-in error correction coding solutions to assure a low chip failure rate (CFR) even with unavoidable single bit failures. The monitoring data of the bit failure rate (BFR) can be used togeth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0b00443b29f7556c1f975efe87f8e21
https://doi.org/10.1109/irps.2015.7112765
https://doi.org/10.1109/irps.2015.7112765
Autor:
L. Haspeslagh, G.J.M. Dormans, M.J. van Duuren, Dirk Wellekens, J. Van Houdt, Paul Hendrickx, Guido Groeseneken, B. Kaczer, F. Schuler, M. Lorenzini, Robin Degraeve, Georg Tempel
Publikováno v:
IEEE Transactions on Electron Devices. 51:1392-1400
Data retention in flash memories is limited by anomalous charge loss. In this work, this phenomenon is modeled with a percolation concept. An analytical model is constructed that relates the charge-loss distribution of moving bits in flash memories w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a393187c7b3292d08b9ef0ce2031808
https://doi.org/10.1109/ted.2004.833583
https://doi.org/10.1109/ted.2004.833583
Autor:
Hanno Melzner, Michael Jacob, F. Schuler, Jan Van Houdt, Paul Hendrickx, Dirk Wellekens, Georg Tempel
Publikováno v:
Japanese Journal of Applied Physics. 41:2650-2653
We introduce an analytical physics-based model for the transient simulation of anomalous charge loss in flash memories. This model is applied to determine the bit failure rate and the time-to-failure due to anomalous charge loss. This model can also
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a3a3af2db82ccf2f91249bdff951cee
https://doi.org/10.1143/jjap.41.2650
https://doi.org/10.1143/jjap.41.2650
Publikováno v:
2013 International Semiconductor Conference Dresden - Grenoble (ISCDG).
Program disturb is a major issue limiting the functionality of hot carrier programmed flash memories. This paper reports a detailed characterization of program disturb in a split-gate flash memory cell using source side injection programming. Key par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b44ed55e834af001bea09cc1fee8fe54
https://doi.org/10.1109/iscdg.2013.6656317
https://doi.org/10.1109/iscdg.2013.6656317
Autor:
Georg Tempel
Publikováno v:
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::691044fc69b67e8701b517e344bd7731
https://doi.org/10.7567/ssdm.2003.b-3-1
https://doi.org/10.7567/ssdm.2003.b-3-1
Autor:
Guido Groeseneken, Robin Degraeve, M. Lorenzini, Georg Tempel, Paul Hendrickx, F. Schuler, J. Van Houdt, Dirk Wellekens, L. Haspeslagh, B. Kaczer
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
We present a statistical, unified picture of Stress-Induced Leakage Current (SILC) generation, pre-breakdown current steps and breakdown in 2.4 nm oxide layers during a constant voltage stress. Pre-breakdown current steps were investigated through ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64566202e21f5e4e0ef1e54cdfff9e0e
https://doi.org/10.1109/iedm.2001.979447
https://doi.org/10.1109/iedm.2001.979447
Autor:
Guido Groeseneken, J. Van Houdt, L. Haspeslagh, Dirk Wellekens, Robin Degraeve, Paul Hendrickx, Georg Tempel, M. Lorenzini, F. Schuler
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
Anomalous charge loss in flash memories is modeled with a percolation concept. An analytical model is constructed that relates the charge loss distribution of moving bits in flash memories with the geometric distribution of oxide traps, thus linking
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ad370bdb750e26101ba9b37a7447424
https://doi.org/10.1109/iedm.2001.979607
https://doi.org/10.1109/iedm.2001.979607
Autor:
Andreas Bergmaier, Georg Tempel, Karen Maex, Richard Lindsay, Jens Frühauf, Fredericks Koch, Günther Dollinger, Wilfried Vandervorst
Publikováno v:
MRS Proceedings. 717
During spike annealing of ultra-shallow junctions, large fractions of the dopants form a partially active pile-up at the interface between silicon and the screening oxide layer. In this paper, we show results of sheet resistance, SIMS and high resolu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc343f6aa3ec96635addf8059a00a5a1
https://doi.org/10.1557/proc-717-c3.4
https://doi.org/10.1557/proc-717-c3.4
Publikováno v:
MRS Proceedings. 716
This work deals with the analysis of the resistances of Co-silicided As and B junctions. The influence of junction formation and salicide process on contact resistance was investigated. The contact resistance between the silicide and source/drain reg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cab5e88c917050b618ebe14192d236e
https://doi.org/10.1557/proc-716-b1.10
https://doi.org/10.1557/proc-716-b1.10