Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Georg Raming"'
Publikováno v:
Materials Science Forum. 725:221-226
An internally gettering bulk defect zone and a defect denuded zone of at least 5 µm below the wafer surface were generated by out-diffusion of interstitial oxygen during annealing at temperatures in the range 1075-1100 °C in argon atmosphere. The C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71f0efd309d9da611a95130909e41725
https://doi.org/10.4028/www.scientific.net/msf.725.221
https://doi.org/10.4028/www.scientific.net/msf.725.221
Autor:
Martin Dr. Phys. Weber, Erich Dr Tomzig, A. Muiznieks, W. von Ammon, Th. Wetzel, Georg Raming, Janis Virbulis
Publikováno v:
Journal of Crystal Growth. 266:34-39
A model approach for a modification of the effective heat conductivity in the turbulent melt flow simulation for 28″ Si CZ crucibles is presented, which helped to overcome deficiencies in the growth interface shape prediction for industrial 300 mm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a74b9a89a8f40054dd301e561bae70bf
https://doi.org/10.1016/j.jcrysgro.2004.02.027
https://doi.org/10.1016/j.jcrysgro.2004.02.027
Publikováno v:
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering. 22:123-133
The paper describes numerical simulation tools for electromagnetic (EM), hydrodynamic, temperature and concentration fields in industrial Czochralski (CZ) and floating zone (FZ) single silicon crystal growth facilities under the influence of several
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f49d1a877018039ad664421a07f2e70
https://doi.org/10.1108/03321640310452222
https://doi.org/10.1108/03321640310452222
Publikováno v:
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering. 22:158-169
The present paper gives an overview of the complex mathematical modelling of industrial Czochralski (CZ) and floating‐zone (FZ) processes for the growth of large silicon single crystals from melt. Extensive numerical investigations of turbulent Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ffda303679f650898bab407084ce042
https://doi.org/10.1108/03321640310452259
https://doi.org/10.1108/03321640310452259
Autor:
Alfred Mu hlbauer, Andris Muiznieks, Gundars Ratnieks, Armands Krauze, Georg Raming, Thomas Wetzel
Publikováno v:
COMPEL; 2003, Vol. 22 Issue 1, p158-169, 12p
Autor:
Alfred Mu hlbauer, Andris Muiznieks, Gundars Ratnieks, Armands Krauze, Georg Raming, Thomas Wetzel
Publikováno v:
COMPEL; 2003, Vol. 22 Issue 1, p123-133, 11p