Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Georg Knebl"'
Autor:
Florian Rothmayr, Edgar David Guarin Castro, Fabian Hartmann, Georg Knebl, Anne Schade, Sven Höfling, Johannes Koeth, Andreas Pfenning, Lukas Worschech, Victor Lopez-Richard
Publikováno v:
Nanomaterials, Vol 12, Iss 6, p 1024 (2022)
Resonant tunneling diode photodetectors appear to be promising architectures with a simple design for mid-infrared sensing operations at room temperature. We fabricated resonant tunneling devices with GaInAsSb absorbers that allow operation in the 2
Externí odkaz:
https://doaj.org/article/aff09d8ca22542acb8831af49bfd3600
Autor:
Edgar David Guarin Castro, Florian Rothmayr, Sebastian Krüger, Georg Knebl, Anne Schade, Johannes Koeth, Lukas Worschech, Victor Lopez-Richard, Gilmar Eugenio Marques, Fabian Hartmann, Andreas Pfenning, Sven Höfling
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055024-055024-6 (2020)
We have studied the optical and electronic transport properties of n-type AlSb/GaInAsSb double barrier quantum well resonant tunneling diodes (RTDs). The RTDs were grown by molecular beam epitaxy on GaSb substrates. Collector, quantum well, and emitt
Externí odkaz:
https://doaj.org/article/edc94ef927c94e3f91132e7985e04a29
Autor:
Andreas Pfenning, Yaksh Rawal, Anne Schade, Andreas Bader, Fabian Hartmann, Lukas Worschech, Georg Knebl, Sven Höfling, Robert Weih
Publikováno v:
Infrared Remote Sensing and Instrumentation XXVIII.
We present recent progress on novel mid-infrared (MIR) light emitters and detectors. Optimized heterostructure and high-quality crystal growth allow for room temperature operation of interband cascade lasers (ICLs) with lasing wavelengths 𝜆 ≥ 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3d473594861f5c1a21d48166b561802
https://doi.org/10.1117/12.2570729
https://doi.org/10.1117/12.2570729
Autor:
Sergey Ganichev, Georg Knebl, T. Hummel, Martin Kamp, Sven Höfling, Sergey Tarasenko, P. Pfeffer, Helene Plank
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 85:193-198
The work was supported by the Elite Network of Bavaria (K-NW-2013-247), the DFG priority program SPP1666, the Volkswagen Stiftung Program, the State of Bavaria and the German Research Foundation (Ka2318/4-1). S.A.T. acknowledges support from the RFBR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd4332f920313dd89d8f2c4e9116e5bb
https://doi.org/10.1016/j.physe.2016.08.036
https://doi.org/10.1016/j.physe.2016.08.036
Autor:
Johannes Koeth, Andreas Pfenning, Anne Schade, Victor Lopez-Richard, Fabian Hartmann, Edgar David Guarin Castro, Georg Knebl, Florian Rothmayr, Gilmar E. Marques, Sebastian Krüger, Lukas Worschech, Sven Höfling
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055024-055024-6 (2020)
We have studied the optical and electronic transport properties of n-type AlSb/GaInAsSb double barrier quantum well resonant tunneling diodes (RTDs). The RTDs were grown by molecular beam epitaxy on GaSb substrates. Collector, quantum well, and emitt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61c65a286d2b235d09156152036b4198
https://doaj.org/article/edc94ef927c94e3f91132e7985e04a29
https://doaj.org/article/edc94ef927c94e3f91132e7985e04a29
Autor:
Sven Höfling, Andreas Pfenning, Fabian Hartmann, Robert Weih, Lukas Worschech, C. Kistner, Martin Kamp, Anne Schade, Manuel Meyer, Johannes Koeth, Andreas Bader, Florian Rothmayr, Georg Knebl, Sebastian Krüger
Publikováno v:
Infrared Remote Sensing and Instrumentation XXVI.
Molecule and gas sensing is a key technology that is applied in multiple environmental, industrial and medical fields. In particular optical detection technologies enable contactless, nondestructive, highly sensitive and fast detection of even smalle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ddb7daafa918f4280c7d41abe3dde0d
https://doi.org/10.1117/12.2324501
https://doi.org/10.1117/12.2324501
Autor:
L. Worschech, S. Schmid, Fabian Hartmann, Martin Kamp, Sven Höfling, P. Pfeffer, Gérald Bastard, E. Batke, Georg Knebl
The work was supported by the DFG (project Ka2318/5-1) and the Elite Network of Bavaria within the graduate program “Topological Insulators”. We study the optical tunability of the charge carrier type in InAs/GaSb double quantum wells with its ty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::662953d2bb655a9437c6cf66d111bf21
https://hdl.handle.net/10023/15511
https://hdl.handle.net/10023/15511
Autor:
L. Worschech, Florian Rothmayr, Georg Knebl, S. Krueger, Andreas Pfenning, Anne Schade, C. Kistner, J. Koeth, Sven Höfling, Fabian Hartmann
The authors are grateful for financial support by the BMBF via the national project HIRT (FKZ:13XP5003A). We present resonant tunneling diode-photodetectors (RTD-PDs) with GaAs0.15Sb0.85/AlAs0.1Sb0.9 double barrier structures combined with an additio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e374dc6f13220e2985ba4fc1a6515ad9
https://hdl.handle.net/10023/13279
https://hdl.handle.net/10023/13279
Autor:
Andreas Pfenning, L. Worschech, Anne Schade, J. Koeth, S. Krueger, Georg Knebl, C. Kistner, Florian Rothmayr, Fabian Hartmann, Sven Höfling
Publikováno v:
CLEO Pacific Rim Conference.
We fabricated resonant tunneling diode photodetectors with a GaInAsSb absorption layer and a GaAsSb/AlAsSb double barrier. The detector cut-off wavelength is $3.5\ {\mu \text{m}}$ and reaches a peak sensitivity of 0.85 A/W at 2004 nm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a999eaef62742fbaee4f81a5fbcfaf41
https://doi.org/10.1364/cleopr.2018.th1l.1
https://doi.org/10.1364/cleopr.2018.th1l.1
Autor:
Andreas Pfenning, Robert Weih, Monika Emmerling, Martin Kamp, Georg Knebl, Sven Höfling, Andreas Bader, Fabian Hartmann, Lukas Worschech
Publikováno v:
Infrared Remote Sensing and Instrumentation XXV.
We present antimonide-based resonant tunneling photodetectors with GaSb/AlAsSb double barrier structures and pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. Due to the incorporation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d8b64f911888ed7339be3618121efc8
https://doi.org/10.1117/12.2274917
https://doi.org/10.1117/12.2274917