Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Georg Bruederl"'
Autor:
Sven Gerhard, Lars Naehle, Bruno Jentzsch, Harald Koenig, Elisabeth Reiger, Urs Heine, Soenke Tautz, Christoph Eichler, Georg Bruederl, Teresa Wurm, Damir Borovac, Martin Behringer, Laura Kreiner, Mariel Jama, Norwin von Malm, Anne Balck, Markus Baumann, Volker Krause
Publikováno v:
Gallium Nitride Materials and Devices XVIII.
Autor:
Georg Bruederl, Harald König, Ulrich T. Schwarz, Yijie Mu, Hassan Banayeem, Matthias Damm, Soenke Tautz
Publikováno v:
Gallium Nitride Materials and Devices XV.
We investigate the angularly, temporally, and spectrally resolved far-field dynamics of a single lateral mode green (Al,In)GaN laser diodes. For applications as directly modulated light source in laser projection, for AR/VR/MR, etc., a stable beam po
Autor:
Christoph Eichler, Sven Gerhard, Muhammad Ali, Soenke Tautz, André Somers, Uwe Strauss, Harald Koenig, Bernhard Stojetz, Matthias Peter, Alfred Lell, Andreas Loeffler, Georg Bruederl, Urs Heine
Publikováno v:
2017 IEEE High Power Diode Lasers and Systems Conference (HPD).
We present the improvements in power conversion efficiency of high power multi-mode blue laser diodes. The improved device architecture shows a peak wall plug efficiency of ∼ 44.2 % at room temperature. Furthermore, the device delivers an optical o
Autor:
Uwe Strauss, Georg Bruederl, Harald Koenig, Matthias Peter, Bernhard Stojetz, André Somers, Urs Heine, Andreas Loeffler, Christoph Eichler, Sven Gerhard, Teresa Wurm, Soenke Tautz
Publikováno v:
SPIE Proceedings.
The range of applications of blue and green lasers is increasing from year to year. Driving factors are costs and performance. On one hand we study the characteristics of low power R&D c-plane laser structures with improved Gaussian vertical and hori
Autor:
Christoph Eichler, Sönke Tautz, Adrian Stefan Avramescu, Uwe Strauss, Georg Bruederl, Jens Müller, Teresa Lermer, Stephan Lutgen
Publikováno v:
SID Symposium Digest of Technical Papers. 42:685-688
We report on direct green lasers based on nitride semiconductors that are suitable for mobile projection applications. The TO38 packaged lasers achieved in continuous wave operation at 522nm wavelength more than 80mW optical power. The wall plug effi
Autor:
Uwe Strauss, Jens Müller, Adrian Stefan Avramescu, Georg Bruederl, Stephan Lutgen, Teresa Lermer, Désirée Queren
Publikováno v:
physica status solidi (a). 207:1318-1322
We present true green InGaN ridge waveguide (RWG) laser diodes (LDs) at 520 nm on c-plane GaN substrates in pulse operation at room temperature. Defect reduction in the In-rich quantum wells by improving growth conditions of the epitaxial layers is t
Publikováno v:
Semiconductor Science and Technology. 22:418-421
Two-inch free-standing GaN wafers were implanted by 100 keV H+2 ions with a dose of 1.3 × 1017 cm−2 at room temperature. The hydrogen implantation induced damage in GaN extends between 230 to 500 nm from the surface as measured by cross-sectional
Autor:
Bernhard Stojetz, Uwe Strauss, Christoph Eichler, Teresa Lermer, Adrian Avramescu, Clemens Vierheilig, Soenke Tautz, Thomas Hager, Georg Bruederl
Publikováno v:
2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR).
Summary form only given. Two fields for laser projection have attended big interest since several years due to the potential of high volume markets. One is the mobile projection; ideally a projection unit embedded in a mobile phone. For customer acce
Autor:
Georg Bruederl, Uwe Strauss, Christoph Eichler, Teresa Lermer, Ines Pietzonka, Andreas Breidenassel, Dimitri Dini, Adrian Stefan Avramescu, Alvaro Gomez-Iglesias, Jens Müller, Bernhard Pasenow, Ulrich T. Schwarz, Soenke Tautz, Alfred Lell, Stephan W. Koch, Wolfgang G. Scheibenzuber, Stephan Lutgen
Publikováno v:
Novel In-Plane Semiconductor Lasers X.
Mobile laser projection is of great commercial interest. Today, a key parameter in embedded mobile applications is the optical output power and the wall plug efficiency of blue and green lasers. We report on improvements of the performance of true bl
Autor:
Joachim Wagner, Berthold Hahn, Uli Schwarz, Martin Strassburg, E. Baur, Ansgar Laubsch, Norbert Linder, Raimund Oberschmid, Alfred Lell, Stephan Lutgen, Harald Braun, Matthias Sabathil, Georg Bruederl
Publikováno v:
Light-Emitting Diodes: Research, Manufacturing, and Applications XI.
The internal quantum efficiency as a function of the internal electric field was studied in InGaN/GaN based quantumwell heterostructures. Most striking, we find the IQE to be independent of the electron hole overlap for a standard green-emitting sing