Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Geon-Uk Kim"'
Autor:
Eunhwan Kim, Yumi Hwang, Heejene Kim, Geon-Uk Kim, Yeong Chan Ryu, Minguen Yoon, Kang-Yell Choi
Publikováno v:
Pharmaceutics, Vol 15, Iss 8, p 2028 (2023)
Cutaneous wound healing is a complex and dynamic process with high energy demand. The activation of glycolysis is essential for restoring the structure and function of injured tissues in wounds. Pyruvate kinase M2 (PKM2) is an enzyme that plays a cru
Externí odkaz:
https://doaj.org/article/fefb42a0bca54133bc0d191b5a2dbc6d
Publikováno v:
International Journal of Molecular Sciences, Vol 24, Iss 14, p 11742 (2023)
The Wnt/β-catenin signaling pathway plays important roles in the multi-phases of wound healing: homeostasis, inflammation, proliferative, and remodeling phases. However, there are no clinically available therapeutic agents targeting the Wnt/β-caten
Externí odkaz:
https://doaj.org/article/4d51c4054fd142c9b6fd4970a77fa38b
Autor:
Yeong Chan Ryu, Jiyeon Park, You-Rin Kim, Sehee Choi, Geon-Uk Kim, Eunhwan Kim, Yumi Hwang, Heejene Kim, Gyoonhee Han, Soung-Hoon Lee, Kang-Yell Choi
Publikováno v:
Cells, Vol 12, Iss 4, p 555 (2023)
The number of people suffering from hair loss is increasing, and hair loss occurs not only in older men but also in women and young people. Prostaglandin D2 (PGD2) is a well-known alopecia inducer. However, the mechanism by which PGD2 induces alopeci
Externí odkaz:
https://doaj.org/article/e748a3a88dce4e9dbe31c94e1e347d31
Autor:
Yeong Chan Ryu, You-Rin Kim, Jiyeon Park, Sehee Choi, Won-Ji Ryu, Geon-Uk Kim, Eunhwan Kim, Yumi Hwang, Heejene Kim, Gyoonhee Han, Soung-Hoon Lee, Kang-Yell Choi
Publikováno v:
Pharmaceutics, Vol 14, Iss 12, p 2774 (2022)
Hair follicle stem cells (HFSCs) utilize glycolytic metabolism during their activation and anagen induction. However, the role of pyruvate kinase M2 (PKM2), which catalyzes the final step of glycolysis, in hair regeneration has not been elucidated. I
Externí odkaz:
https://doaj.org/article/fc862ab20e6c48098de86778b063494c
Autor:
So-Ra Min, Min-Su Cho, Sang-Ho Lee, Jin Park, Hee-Dae An, Geon-Uk Kim, Young-Jun Yoon, Jae-Hwa Seo, Jae-Won Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In-Man Kang
Publikováno v:
Materials, Vol 15, Iss 3, p 819 (2022)
The self-heating effects (SHEs) on the electrical characteristics of the GaN MOSFETs with a stacked TiO2/Si3N4 dual-layer insulator are investigated by using rigorous TCAD simulations. To accurately analyze them, the GaN MOSFETs with Si3N4 single-lay
Externí odkaz:
https://doaj.org/article/146265db15f34c6e8c2499314ddb3335
Autor:
Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In Man Kang
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract In this paper, a capacitorless one-transistor dynamic random access memory (1 T-DRAM) based on a polycrystalline silicon (poly-Si) metal-oxide-semiconductor field-effect transistor with the asymmetric dual-gate (ADG) structure is designed an
Externí odkaz:
https://doaj.org/article/6a171702f7b849b0ad8648c30f07f5c0
Autor:
Jun-Hyeok Heo, In-Man Kang, Sang-Ho Lee, Jin Park, So-Ra Min, Geon-Uk Kim, Ga-Eon Kang, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 23:17-25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e7833b8768e68a34fb790f8715d0f43
https://doi.org/10.5573/jsts.2023.23.1.17
https://doi.org/10.5573/jsts.2023.23.1.17
Autor:
Ga-Eon Kang, In-Man Kang, Sang-Ho Lee, Jin Park, So-Ra Min, Geon-Uk Kim, Jun-Hyeok Heo, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 23:8-16
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc737a903894dc439771fd84f26f3bca
https://doi.org/10.5573/jsts.2023.23.1.8
https://doi.org/10.5573/jsts.2023.23.1.8
Autor:
Yeong Chan Ryu, You-rin Kim, Jiyeon Park, Sehee Choi, Geon-Uk Kim, Eunhwan Kim, Yumi Hwang, Heejene Kim, Soon Sun Bak, Jin Eun Lee, Young Kwan Sung, Gyoonhee Han, Soung-Hoon Lee, Kang-Yell Choi
Publikováno v:
BMB Reports. 55:559-564
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce456c38013798331d877fff77f16ef6
https://doi.org/10.5483/bmbrep.2022.55.11.081
https://doi.org/10.5483/bmbrep.2022.55.11.081
Autor:
So Ra Min, Sang Ho Lee, Jin Park, Geon Uk Kim, Ga Eon Kang, Jun Hyeok Heo, Young Jun Yoon, Jae Hwa Seo, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In Man Kang
Publikováno v:
Current Applied Physics. 43:106-115
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90915bf1867eb5c18377fffe01f5f388
https://doi.org/10.1016/j.cap.2022.08.015
https://doi.org/10.1016/j.cap.2022.08.015