Zobrazeno 1 - 10
of 342
pro vyhledávání: '"Geok Ing Ng"'
Autor:
Zecen Zhang, Geok Ing Ng, Ting Hu, Haodong Qiu, Xin Guo, Wanjun Wang, Mohamed S. Rouifed, Chongyang Liu, Jiaxu Sia, Jin Zhou, Callum G. Littlejohns, Graham T. Reed, Hong Wang
Publikováno v:
IEEE Photonics Journal, Vol 10, Iss 2, Pp 1-8 (2018)
A mid-infrared (MIR) biochemical sensor based on a one-time Si etching suspended microracetrack resonator with lateral subwavelength-grating metamaterial cladding is theoretically and experimentally demonstrated on a commercial 340-nm-thick-top-silic
Externí odkaz:
https://doaj.org/article/3f3a9e0313cb4a049ea88456364af496
Autor:
Zecen Zhang, Geok Ing Ng, Ting Hu, Haodong Qiu, Xin Guo, Wanjun Wang, Mohamed Said Rouifed, Chongyang Liu, Jiaxu Sia, Jin Zhou, Callum G. Littlejohns, Milos Nedeljkovic, Graham T. Reed, Hong Wang
Publikováno v:
IEEE Photonics Journal, Vol 10, Iss 3, Pp 1-8 (2018)
Thermally tunable Fano and electromagnetically induced transparency (EIT) resonances are theoretically and experimentally demonstrated based on a Mach-Zehnder interferometer assisted Bragg grating-microring coupled resonant system on silicon-on-insul
Externí odkaz:
https://doaj.org/article/759468197dae46e08f240a6fc8722784
Autor:
Abhinay Sandupatla, Subramaniam Arulkumaran, Kumud Ranjan, Geok Ing Ng, Peter P. Murmu, John Kennedy, Shugo Nitta, Yoshio Honda, Manato Deki, Hiroshi Amano
Publikováno v:
Sensors, Vol 19, Iss 23, p 5107 (2019)
A low voltage (−20 V) operating high-energy (5.48 MeV) α-particle detector with a high charge collection efficiency (CCE) of approximately 65% was observed from the compensated (7.7 × 1014 /cm3) metalorganic vapor phase epitaxy (MOVPE) grown 15
Externí odkaz:
https://doaj.org/article/ea0264aa05fc4713992db75ef6309e07
Autor:
Wan Khai, Loke, Yue, Wang, Hanlin, Xie, Hui Teng, Tan, Shuyu, Bao, Kwang Hong, Lee, Lina, Khaw, Lee Eng Kian, Kenneth, Chuan Seng, Tan, Geok Ing, Ng, Fitzgerald, Eugene A., Soon Fatt, Yoon
Publikováno v:
In Materials Science & Engineering B October 2023 296
Autor:
Zheng Zhong, Geok Ing Ng, Yong-Xin Guo, Kenneth Eng Kian Lee, Zhihong Liu, Hanlin Xie, Wenrui Hu
Publikováno v:
IEEE Microwave and Wireless Components Letters. 31:141-144
GaN-on-Si high electron mobility transistors (HEMTs) were fabricated using Si CMOS-compatible metallization scheme for RF power amplifiers (PAs)in 5G low-power mobile system-on-chips (SoCs). Ta/Al metals were adopted for the ohmic contact formation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd95438627be564ba3b360effff69135
https://doi.org/10.1109/lmwc.2020.3036389
https://doi.org/10.1109/lmwc.2020.3036389
Publikováno v:
2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e0c6c471c8e73456c1a2fd18802cac7
https://doi.org/10.1109/imws-amp53428.2021.9643883
https://doi.org/10.1109/imws-amp53428.2021.9643883
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
100 nm T-gate GaN-on-Si HEMTs fabricated using CMOS-compatible Au-free Ta/Al ohmic and Ti/Al gate contacts are reported in this work. The device exhibited a maximum drain current of 1.82 A/mm, a peak transconductance of 489 mS/mm, a cut-off frequency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c42e9350bbbf4a94915574ed7b82f922
https://doi.org/10.1109/edtm50988.2021.9420941
https://doi.org/10.1109/edtm50988.2021.9420941
Autor:
R. Lingaparthi, Subramaniam Arulkumaran, Susana Perez, K. Ranjan, M. Agrawal, Geok Ing Ng, S. García-Sánchez, K. Radhakrishnan, J. Mateos, Dharmarasu Nethaji, Tomas Gonzalez, Ignacio Iniguez-de-la-Torre
Publikováno v:
GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname
instname
[EN]We report on the modeling of self-heating in GaN-based devices. While a constant thermal resistance is able to account for the self-heating effects at low power, the decrease of the thermal conductance of semiconductors when the lattice temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c71146149042da963dab9b70ccc72d4e
https://hdl.handle.net/10366/147140
https://hdl.handle.net/10366/147140
Phase noise reduction of a 2 μm passively mode-locked laser through hybrid III-V/silicon integration
Autor:
Geok Ing Ng, Wanjun Wang, Hong Wang, Yu Zhang, Jia Xu Brian Sia, Xiang Li, Chongyang Liu, Xin Guo, Zhichuan Niu, Cunzhu Tong, Zhongliang Qiao
Passively mode-locked semiconductor lasers are promising for a wide variety of chip-scale high-speed and high-capacity applications. However, the phase noise/timing jitter of such light sources are normally high, which restricts their applications. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2db42cd5a4951b53f7fc9cc42ef56341
https://hdl.handle.net/10356/159840
https://hdl.handle.net/10356/159840
Publikováno v:
Electronics, Vol 9, Iss 1858, p 1858 (2020)
Electronics
Volume 9
Issue 11
Electronics
Volume 9
Issue 11
AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMT) with a low-temperature epitaxy (LTE)-grown single crystalline AlN gate dielectric were demonstrated for the first time and the post-gate annealing effects at 400 &de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ee40dd84ce415eb3163fe4631cc0c5a
https://www.mdpi.com/2079-9292/9/11/1858
https://www.mdpi.com/2079-9292/9/11/1858