Zobrazeno 1 - 10
of 131
pro vyhledávání: '"Geoffrey W. Taylor"'
Publikováno v:
Journal of Forest History, 1976 Jul 01. 20(3), 161-162.
Externí odkaz:
https://www.jstor.org/stable/3983403
Autor:
Sue M. Baptie
Publikováno v:
Journal of Forest History. 20:161-162
Publikováno v:
International Journal of Infrared and Millimeter Waves. 23:819-839
In this paper, the radiation properties of log-periodic (LP) antennas on extended hemispherical dielectric lenses are investigated. The starting point is the far field pattern for the log-periodic antenna on a semi-infinite silicon substrate obtained
Autor:
P.R. Claisse, Geoffrey W. Taylor, P.A. Kiely, D.P. Docter, S. Daryanani, P.A. Evaldsson, S.K. Sargood, P. Cooke, T. Vang
Publikováno v:
IEEE Journal of Quantum Electronics. 29:785-800
An approach to laser-based optoelectronic integration is described. It is shown that by using a single epitaxial growth structure and a common processing sequence, all the electrical and optical devices required for a complete optoelectronic integrat
Autor:
Geoffrey W. Taylor, P.R. Claisse
Publikováno v:
IEEE Journal of Quantum Electronics. 29:89-96
The longitudinal mode spectrum and the mode suppression ratio of a quantum-well laser are derived in terms of the simulated emission lifetime of the photons in a mode. Analytic expressions are obtained from the Fermi level as a function of current an
Autor:
P. Cooke, P.R. Claisse, C. A. Burrus, D.P. Docter, S.K. Sargood, T. Vang, Geoffrey W. Taylor, P.A. Kiely
Publikováno v:
IEEE Journal of Quantum Electronics. 29:136-149
An approach to optoelectronic integration utilizing a universal heterostructure with a single GaAs quantum-well active region is presented. The inversion channel forms the basis of a heterojunction field-effect transistor, a lateral current injection
Publikováno v:
IEEE Photonics Technology Letters. 4:823-826
A new regime of semiconductor laser operation was observed in quantum-well inversion channels of double heterostructure optoelectronic switches. The quantum-well active region operated with substantial excess negative charge imbalance due to the prox
Publikováno v:
IEEE Photonics Technology Letters. 4:605-608
Optoelectronic integration of vertical-cavity surface-emitting lasers would be highly desirable for future optical interconnect and preprocessing applications. Configuring the double-heterostructure optoelectronic switch (DOES) as such a laser offers
Autor:
Geoffrey W. Taylor, P. Cooke
Publikováno v:
IEEE Transactions on Electron Devices. 39:2529-2540
The switching mechanism in the GaAs/AlGaAs double-heterostructure optoelectronic switching device (DOES) is investigated in the context of the single-quantum-well graded index laser structure. A new charge conservation approach is introduced to expla
Publikováno v:
IEEE Transactions on Electron Devices. 39:2523-2528
Experimental results are presented for the GaAs/AlGaAs single-quantum-well DOES (double heterostructure optoelectronic switch) laser. Switching data are reported for the three-terminal structure in which inversion channel contact is made via a self-a