Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Geoffrey K. Reeves"'
Publikováno v:
MRS Advances. 3:3053-3059
A model of a High Voltage CMOS (HV-CMOS) Monolithic Active Pixel Sensor (MAPS) has been modelled using Technology Computer Aided Design (TCAD). The model has incorporated both the active region and the on-pixel readout circuits which were comprised o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58a403599513371090ade5049a89d744
https://doi.org/10.1557/adv.2018.417
https://doi.org/10.1557/adv.2018.417
Autor:
Anthony S. Holland, Geoffrey K. Reeves, Mark C Ridgway, Martyn H. Kibel, P. Tanner, Neelu Shrestha, Patrick W. Leech
Publikováno v:
MRS Advances. 2:2903-2908
The electrical characteristics of Au/Ni/Ti/ n-SiC contacts have been examined as a function of implant dose (1013-1014 ions/cm2) at 5 KeV and temperature of annealing (750-1000 °C). Measurements of specific contact resistance, ρc, were approximatel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e02b7fd70961f9cb3e172f611d14bf26
https://doi.org/10.1557/adv.2017.314
https://doi.org/10.1557/adv.2017.314
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 30:257-265
Contact test structures where there is more than one non-metal layer, are significantly more complex to analyse compared to when there is only one such layer like active silicon on an insulating substrate. Here, we use analytical models for complex t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0a995bcc2ae1779a31627cb44e1ed2f
https://doi.org/10.2298/fuee1702257s
https://doi.org/10.2298/fuee1702257s
Publikováno v:
Materials Letters. 166:39-42
The effect of low energy implantation of P or C ions in 3 C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 10 13 –10 15 ions/cm 2 . Measurements of specific contact resistance, ρ c , were performed using the tw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9286a9581ef5791a62a9b40e8228105a
https://doi.org/10.1016/j.matlet.2015.12.036
https://doi.org/10.1016/j.matlet.2015.12.036
Publikováno v:
MRS Advances. 1:157-162
A modified design of the transmission line model test structure uses the simple calculation of specific contact resistance, ρc, based on a two contact linear pattern but without the requirement of a mesa etch. This modified structure uses a linear T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c8e04c99ef3a2bc14de088dd2a5d411
https://doi.org/10.1557/adv.2016.77
https://doi.org/10.1557/adv.2016.77
Autor:
Patrick W. Leech, Geoffrey K. Reeves, Anthony S. Holland, Anders J. Barlow, Martyn H. Kibel, Philip Tanner
Publikováno v:
Microelectronic Engineering. 215:111016
The electrical characteristics of Cr/Ni/Au and Ni/Cr/Au contacts to n-type 3C-SiC have been examined using a two-contact circular test structure. In Ni/Cr/Au contacts with Ni as contact layer and Cr as intermediate layer, both the modified sheet resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d91541b952dc0edb7abcb602c8a30e11
https://doi.org/10.1016/j.mee.2019.111016
https://doi.org/10.1016/j.mee.2019.111016
Autor:
M. Mazalan, N. F. Mohd Nasir, Patrick W. Leech, Khalilah Hassan, Philip Tanner, Anthony S. Holland, Yufridin Wahab, Geoffrey K. Reeves
Publikováno v:
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM).
An array of Circular Transmission Line Model (CTLM) metal contacts was deposited onto the upper surface of the n-SiC/Si chips using laser micromachining as an alternative to standard photolithography technique. Thin epitaxial n-type 3C-SiC/Si chips w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4730db62299124c3f0f05cf6fb45934e
https://doi.org/10.1109/rsm.2015.7355003
https://doi.org/10.1109/rsm.2015.7355003
Publikováno v:
MRS Proceedings. 1743
The effect of low energy implantation of P or C ions in 3C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013-1015 ions/cm2. Measurements of specific contact resistance, ρc, were performed using the two-contact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c396bf2b2be5a10a6c67cf4c9a22cda1
https://doi.org/10.1557/opl.2015.284
https://doi.org/10.1557/opl.2015.284
Publikováno v:
Applied Surface Science. 221:302-307
Diamond films were implanted with Au or O ions at multiple energies in order to produce a uniform region of C vacancies. Analysis of the implanted films by Raman spectroscopy has shown that the proportion of non-diamond or amorphous carbon increased
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32670a4b19847ea23792b1c59c3acfb6
https://doi.org/10.1016/s0169-4332(03)00949-8
https://doi.org/10.1016/s0169-4332(03)00949-8
Autor:
Geoffrey K. Reeves, Yue Pan, Patrick W. Leech, Philip Tanner, Aaron Collins, Anthony S. Holland
Publikováno v:
2014 International Conference on Microelectronic Test Structures (ICMTS).
We present the experimentally determined specific contact resistivity of as deposited nickel to highly doped n-type 3-C silicon carbide using a novel test structure. The specific contact resistivity, extracted using this test structure and the corres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::236597f62734c45beb43c8247da65aa1
https://doi.org/10.1109/icmts.2014.6841471
https://doi.org/10.1109/icmts.2014.6841471