Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Geoffrey Avit"'
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract GaN nanorods (NRds) with axial InGaN/GaN MQWs insertions are synthesized by an original cost-effective and large-scale nanoimprint-lithography process from an InGaN/GaN MQWs layer grown on c-sapphire substrates. By design, such NRds exhibit
Externí odkaz:
https://doaj.org/article/253098597fe742d18e9f6715bdbd8a1c
Autor:
Mohammed Zeghouane, Gabin Grégoire, Emmanuel Chereau, Geoffrey Avit, Philipp Staudinger, Kirsten E. Moselund, Heinz Schmid, Pierre-Marie Coulon, Philip Shields, Nebile Isik Goktas, Ray R. LaPierre, Agnès Trassoudaine, Yamina André, Evelyne Gil
Publikováno v:
Crystal Growth & Design. 23:2120-2127
Autor:
Emmanuel Chereau, Vladimir G. Dubrovskii, Gabin Grégoire, Geoffrey Avit, Philipp Staudinger, Heinz Schmid, Catherine Bougerol, Pierre-Marie Coulon, Philip A. Shields, Agnès Trassoudaine, Evelyne Gil, Ray R. LaPierre, Yamina André
Publikováno v:
Crystal Growth & Design.
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Scientific Reports
Scientific Reports
GaN nanorods (NRds) with axial InGaN/GaN MQWs insertions are synthesized by an original cost-effective and large-scale nanoimprint-lithography process from an InGaN/GaN MQWs layer grown on c-sapphire substrates. By design, such NRds exhibit a single
Publikováno v:
Applied Physics Letters. 121:082106
We studied indium incorporation into InGaN/GaN quantum wells grown by metal–organic vapor phase epitaxy by systematically varying of gallium and indium precursor flows on (0001), (10[Formula: see text]3), (11[Formula: see text]2), and (10[Formula:
Autor:
Agnès Trassoudaine, Dominique Castelluci, Catherine Bougerol, Mohammed Zeghouane, Thomas W. Cornelius, Pierre Ferret, Geoffrey Avit, Ariane Meguekam-Sado, Olivier P. Thomas, Yamina André, Thierry Taliercio, Eric Tournié, Evelyne Gil, Damien Salomon
Publikováno v:
CrystEngComm
CrystEngComm, 2019, 21 (16), pp.2702-2708. ⟨10.1039/C9CE00161A⟩
CrystEngComm, Royal Society of Chemistry, 2019, 21 (16), pp.2702-2708. ⟨10.1039/C9CE00161A⟩
CrystEngComm, 2019, 21 (16), pp.2702-2708. ⟨10.1039/C9CE00161A⟩
CrystEngComm, Royal Society of Chemistry, 2019, 21 (16), pp.2702-2708. ⟨10.1039/C9CE00161A⟩
Well-ordered and vertically aligned InN nanorods with high aspect ratios are synthesized by hydride vapor phase epitaxy (HVPE) using the selective area growth (SAG) approach. The growth occurs through the apertures of a SiNx masked Ga-polar GaN/c-Al2
Autor:
Agnès Trassoudaine, Dominique Castelluci, Geoffrey Avit, Catherine Bougerol, Jihen Jridi, Philip A. Shields, Pierre Ferret, Evelyne Gil, Mohammed Zeghouane, Yamina André, Vladimir G. Dubrovskii, Pierre-Marie Coulon
Publikováno v:
Zeghouane, M, André, Y, Avit, G, Jridi, J, Bougerol, C, Coulon, P, Ferret, P, Castelluci, D, Gil, E, Shields, P, Dubrovskii, V G & Trassoudaine, A 2020, ' Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates ', Nano Futures, vol. 4, no. 2, 025002, pp. 1-7 . https://doi.org/10.1088/2399-1984/ab8450
Nano Futures
Nano Futures, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩
Nano Futures, IOPScience, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩
Nano Futures
Nano Futures, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩
Nano Futures, IOPScience, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩
Experimental data and a supporting model are presented for the formation of voids in InN nanorods grown by selective area hydride vapor phase epitaxy on patterned GaN/c-Al 2 O 3 templates. It is shown that these voids shape, due to a high lattice mis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1904517e67607397c508259c3a51787
https://purehost.bath.ac.uk/ws/files/205005931/NANOF_100268_.pdf
https://purehost.bath.ac.uk/ws/files/205005931/NANOF_100268_.pdf
Autor:
Geoffrey Avit, Pierre Ferret, Agnès Trassoudaine, Dominique Castelluci, Mohammed Zeghouane, Pierre Disseix, Eric Tournié, Yamina André, Thierry Taliercio, Joël Leymarie, Evelyne Gil
Publikováno v:
Crystal Growth & Design
Crystal Growth & Design, 2020, 20 (4), pp.2232-2239. ⟨10.1021/acs.cgd.9b01346⟩
Crystal Growth & Design, American Chemical Society, 2020, 20 (4), pp.2232-2239. ⟨10.1021/acs.cgd.9b01346⟩
Crystal Growth & Design, 2020, 20 (4), pp.2232-2239. ⟨10.1021/acs.cgd.9b01346⟩
Crystal Growth & Design, American Chemical Society, 2020, 20 (4), pp.2232-2239. ⟨10.1021/acs.cgd.9b01346⟩
International audience; The control of the morphology of InN nanorods, which remains challenging due to complex mechanisms involved in the growth process, is essential for the next generation of nano-and optoelectronic devices. In this paper, we repo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::728b1585a5274376d7b6ba75953e807a
https://hal.science/hal-02532717/document
https://hal.science/hal-02532717/document
Autor:
Christine Robert-Goumet, Evelyne Gil, Hadi Hijazi, Vladimir G. Dubrovskii, Dominique Castellucci, Agnès Trassoudaine, Yamina André, Christine Leroux, Geoffrey Avit, Guillaume Monier, Catherine Bougerol
Publikováno v:
Journal of Physical Chemistry C
Journal of Physical Chemistry C, 2018, 122 (33), pp.19230-19235. ⟨10.1021/acs.jpcc.8b05459⟩
Journal of Physical Chemistry C, American Chemical Society, 2018, 122 (33), pp.19230-19235. ⟨10.1021/acs.jpcc.8b05459⟩
Journal of Physical Chemistry C, 2018, 122 (33), pp.19230-19235. ⟨10.1021/acs.jpcc.8b05459⟩
Journal of Physical Chemistry C, American Chemical Society, 2018, 122 (33), pp.19230-19235. ⟨10.1021/acs.jpcc.8b05459⟩
International audience; Despite the unavoidable presence of silicon atoms in the catalyst alloy droplets during the vapor-liquid-solid growth of III-V nanowires on silicon substrates, it remains unknown how the nucleation of nanowires is affected by
Autor:
Y. Liao, Shugo Nitta, Yoann Robin, Agnès Trassoudaine, L. Mostéfa, Hiroshi Amano, Geoffrey Avit, B. Michalska
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.