Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Genyuan Yu"'
Publikováno v:
IEEE Transactions on Electron Devices. 64:206-210
Amorphous ZnSnO ( $a$ -ZnSnO) thin films were synthesized by a combustion solution method to fabricate thin-film phototransistors. The $a$ -ZnSnO phototransistors are extremely sensitive to UV light, with evident photoelectric effect identified at va
Publikováno v:
Surface and Coatings Technology. 304:525-529
Amorphous AlSnO ( a -ATO) thin films have been synthesized by a combustion solution process at low temperatures, with the Al:Sn molar ratio of 1: x ( x = 11 − 7) in the precursors. The influence of compositions on the structural, optical, and elect
Autor:
Jianguo Lu, Xifeng Li, Zhizhen Ye, Weichao Yan, Rongkai Lu, Genyuan Yu, Yiyu Zeng, Shilu Yue, Lingxiang Chen
Publikováno v:
IEEE Transactions on Electron Devices. 63:2412-2416
Amorphous zinc-niobium-tin-oxide (a-ZNTO), a new amorphous oxide semiconductor, was proposed for fabricating thin-film transistors (TFTs). a-ZNTO thin films were grown by magnetron sputtering and used as channel layers of TFTs. The effects of niobium
Publikováno v:
RSC Advances. 5:56116-56120
Ultraviolet (UV) photoconductivity of solution-processed amorphous zinc-aluminum-tin oxide (a-ZATO) TFTs has been investigated in detail to clarify the device responses. The sensitivities of a-ZATO TFTs towards UV light are strongly dependent on the
Publikováno v:
Surface Review and Letters. 25:1850057
The CH3NH3PbI3 films were synthesized by a facile low-cost solution process and were used to fabricate photoconductive detectors. The perovskite photodetector is very sensitive to light, with a high responsivity of 5.51[Formula: see text]mA/W and a s