Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Gensong Li"'
Autor:
Xin Deng, Guoli Zhang, Ling Zhang, Yan Feng, Zehong Li, GuangMou Wu, Yuhuan Yue, Gensong Li, Yu Cao, Ping Zhu
Publikováno v:
PLoS ONE, Vol 10, Iss 11, p e0142558 (2015)
Non-viral gene delivery system with many advantages has a great potential for the future of gene therapy. One inherent obstacle of such approach is the uptake by endocytosis into vesicular compartments. Receptor-mediated gene delivery method holds pr
Externí odkaz:
https://doaj.org/article/36ba63a20adf4152b41c8029d8a5d0e4
Publikováno v:
IEICE Transactions on Information and Systems. :1495-1500
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5172c0d149216dcc97c95d6a4d0ded89
https://doi.org/10.1587/transinf.2021edl8095
https://doi.org/10.1587/transinf.2021edl8095
Publikováno v:
IEEE Transactions on Nuclear Science. 68:1565-1570
Layout dependence of total-ionizing-dose (TID) response, hot-carrier degradation (HCD), and radiation-enhanced HCD (REHCD) in 65-nm bulk Si nMOSFETs are experimentally investigated in this article. For TID response, the average irradiation-induced $V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7b6733142ec3c96c2e137c870f62d6f
https://doi.org/10.1109/tns.2021.3063137
https://doi.org/10.1109/tns.2021.3063137
Publikováno v:
IEEE Transactions on Electron Devices. 68:2142-2146
The impact of heavy ion irradiation on the variability of 65 nm bulk Si MOSFETs is experimentally demonstrated in this brief. Due to the intrinsic random incidence of heavy ions, additional variability is introduced in the irradiated devices through
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5b2950413c1ed61c4a143786d695c54
https://doi.org/10.1109/ted.2021.3060695
https://doi.org/10.1109/ted.2021.3060695
Publikováno v:
Science China Information Sciences. 65
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e48d50a1383e09e9e6c6e210657aca1
https://doi.org/10.1007/s11432-021-3372-2
https://doi.org/10.1007/s11432-021-3372-2
Publikováno v:
IEEE Transactions on Nuclear Science. 67:1320-1325
The total ionizing dose (TID) response of bulk Si PMOS FinFETs with two fin widths and two types of fin orientation (standard and 45° rotated) is experimentally investigated under four irradiation bias conditions. The bias dependence of bulk Si PMOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fc1a3baf22b2bee9dbe7692bcb94698
https://doi.org/10.1109/tns.2020.2979905
https://doi.org/10.1109/tns.2020.2979905
Publikováno v:
IEEE Transactions on Nuclear Science. 66:1592-1598
The interface quality between the gate dielectric and germanium (Ge) channel plays a crucial role for Ge MOSFETs. The impact of different interface passivation techniques on the total ionizing dose (TID) effect of Ge pMOSFET with enclosed-layout and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd2eb18d3f06b79dc40c640202ad087a
https://doi.org/10.1109/tns.2019.2896903
https://doi.org/10.1109/tns.2019.2896903
Publikováno v:
2021 China Semiconductor Technology International Conference (CSTIC).
In this paper, the impact of gate length on Single Event Upset (SEU) characteristics of 14 nm bulk and SOI FinFET 6T SRAM is investigated and compared by mixed-mode 3D TCAD simulation. Simulation results show that for both bulk and SOI FinFET SRAM ce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3973db210e8a03fbe32a232250873e40
https://doi.org/10.1109/cstic52283.2021.9461413
https://doi.org/10.1109/cstic52283.2021.9461413
Publikováno v:
Science China Information Sciences. 64
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d8051db73b5cbc2fbd4513f39663ec8
https://doi.org/10.1007/s11432-019-2795-7
https://doi.org/10.1007/s11432-019-2795-7
Autor:
Gensong Li, Chen Feng, Lingling Liu, Dahai Yu, Sen Li, Chunyu Li, Hanwen Li, Yu Cao, Xin Deng
Publikováno v:
Cell Biochemistry and Function. 36:221-227
Defects in meiotic maturation may lead to chromosome segregation errors and genomic instability. Previous reports indicated that protein kinase C delta (PKCδ) may interact with microtubule organizing center-associated protein to play a role on meiot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::211460ee3a26eda5896f8dd71ad8e6c4
https://doi.org/10.1002/cbf.3334
https://doi.org/10.1002/cbf.3334