Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Genshiro Kawachi"'
Autor:
Genshiro Kawachi
Publikováno v:
SID Symposium Digest of Technical Papers. 51:1390-1393
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd7fd2f4199a89cbc7358b299b5a6e9d
https://doi.org/10.1002/sdtp.14145
https://doi.org/10.1002/sdtp.14145
Autor:
Yukio Taniguchi, Shigeyuki Shimoto, Takahiko Endo, Takashi Okada, Tomoya Katou, Genshiro Kawachi, Kazufumi Azuma, Shinzo Tsuboi, Takashi Ohno, Masahiro Mitani, Masakiyo Matsumura
Publikováno v:
Japanese Journal of Applied Physics. 47:8707-8713
Thin-film transistors (TFTs) were fabricated on polycrystalline silicon (poly-Si) films formed by position-controlled large-grain growth technology using an excimer laser. The field-effect mobility, on-off transition slope, and threshold voltage were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::009a03241296550a9a7cd0d8f4ce054c
https://doi.org/10.1143/jjap.47.8707
https://doi.org/10.1143/jjap.47.8707
Publikováno v:
SID Symposium Digest of Technical Papers. 38:276-279
High-frequency characteristics of sub-micron Si TFTs fabricated on large-grain poly-Si films are demonstrated for the first time. A cutoff frequency (fT) of 6 GHz and a maximum oscillation frequency (f max) of 25 GHz were obtained for the TFT with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::770b624b65a90ceb65505dec9fda68ac
https://doi.org/10.1889/1.2785283
https://doi.org/10.1889/1.2785283
Publikováno v:
Japanese Journal of Applied Physics. 46:1312-1317
The dependences of field-effect mobility, threshold voltage, and subthreshold slope on temperature for low-temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) with large grains were investigated. It was shown that the temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0681d97fe89276e17b3be8a192e6161a
https://doi.org/10.1143/jjap.46.1312
https://doi.org/10.1143/jjap.46.1312
Autor:
Hiroyuki Ogawa, Terunori Warabisako, Masayuki Jyumonji, Genshiro Kawachi, Kazufumi Azuma, Noritaka Akita, Yoshiaki Nakazaki, Masato Hiramatu, Masakiyo Matsumura
Publikováno v:
Japanese Journal of Applied Physics. 46:51-55
Polycrystalline silicon (poly-Si) complementary metal–oxide–semiconductor (CMOS) circuits have been fabricated by using an advanced excimer-laser annealing method and a plasma-oxidation method. The 1-µm-long thin-film transistors (TFTs) were fab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae9d99e1f6e33699ef882f3d17aaee3d
https://doi.org/10.1143/jjap.46.51
https://doi.org/10.1143/jjap.46.51
Publikováno v:
The Journal of The Institute of Image Information and Television Engineers. 61:1320-1325
The effects of the source and drain junction depth on breakdown voltage of high-performance Si TFTs have been studied.It is found that decreasing the junction depth results in a substantial increase in the sourcedrain breakdown voltage (VBD).The impr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aa5b7f0b6c9c50872da35503c1dc02d
https://doi.org/10.3169/itej.61.1320
https://doi.org/10.3169/itej.61.1320
Autor:
Genshiro Kawachi
Publikováno v:
ECS Transactions. 3:45-55
Design considerations for making use of ultra-high performance Si TFTs for future display systems are presented. Careful choice of the thickness and impurity concentration of the TFT channel is important to maximize the breakdown voltage. In the sub-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::860bd45783f51c93f0f8ef6de3a99bf9
https://doi.org/10.1149/1.2356333
https://doi.org/10.1149/1.2356333
Autor:
Masato Hiramatu, Terunori Warabisako, Hiroyuki Ogawa, Masakiyo Matsumura, Genshiro Kawachi, Kazufumi Azuma, Masayuki Jyumonji, Yoshiaki Nakazaki
Publikováno v:
Japanese Journal of Applied Physics. 45:1489-1494
Excellent characteristics of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with long and narrow grains aligned one-dimension have been experimentally clarified for the first time. The field effect mobility and on-off transition slope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75b91a092f2df41a64c114da2db364a2
https://doi.org/10.1143/jjap.45.1489
https://doi.org/10.1143/jjap.45.1489
Publikováno v:
Scopus-Elsevier
Carrier transport processes in hydrogenated amorphous silicon-based thin-film transistors (a-Si:H TFT's) are investigated by spin-dependent transport (SDT). Spin-dependent photoconductivity (SDPC) signals arising from less than ${10}^{6}$ spins in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3f7f4243692a71fb7c8c24f6a00382c
https://doi.org/10.1103/physrevb.54.7957
https://doi.org/10.1103/physrevb.54.7957
Autor:
Kimura Etsuko, Yuka Matsukawa, Hiroki Yamamoto, Nobutake Konishi, Genshiro Kawachi, Y. Wakui, Akira Sasano
Publikováno v:
IEEE Transactions on Electron Devices. 41:1120-1124
A novel process technology for a-Si TFT-LCD's with the buried ITO electrode (BI) structure was developed and applied to 10-in-diagonal LCD panels. By employing the BI structure, an aperture ratio of 29% was achieved in high resolution panels with a p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5138e8311fae9aacfd2ccff8988ea650
https://doi.org/10.1109/16.293338
https://doi.org/10.1109/16.293338