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pro vyhledávání: '"Gennaro Termo"'
Autor:
Stefano Michelis, Sebastiano Costanzo, Giulio Borghello, Henri D. Koch, Gennaro Termo, Daniel M. Fleetwood, Federico Faccio
Publikováno v:
IEEE Transactions on Nuclear Science. 68:573-580
MOS transistors in 65-nm CMOS technology exposed to ultrahigh total ionizing dose (TID) levels show clear evidence of a true dose-rate (DR) dependence. In order to assess the impact of this effect and to understand its origin, an extensive measuremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::949224385db6b917c30bc86958c16b6e
https://doi.org/10.1109/tns.2021.3062622
https://doi.org/10.1109/tns.2021.3062622
