Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Gennady Sh Gildenblat"'
Autor:
T.L. Chen, Gennady Sh. Gildenblat
Publikováno v:
Solid-State Electronics. 49:267-270
Analytical approximation for the MOSFET surface potential is important for the development of the computationally efficient surface-potential-based compact MOSFET models. In the previous work such an approximation was developed in the gradual channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb9a1b3a245977cab40274c5da0a93cb
https://doi.org/10.1016/j.sse.2004.07.016
https://doi.org/10.1016/j.sse.2004.07.016
Autor:
Gennady Sh. Gildenblat, T.L. Chen
Publikováno v:
Solid-State Electronics. 45:335-339
Surface-potential-based models are among the most accurate and physically based compact MOSFET models available today. However, the need for iterative computations of the surface potential limits their computational efficiency, which is critical in C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aff979cfb1f445775c52cdc2d815173
https://doi.org/10.1016/s0038-1101(00)00283-5
https://doi.org/10.1016/s0038-1101(00)00283-5
Publikováno v:
Journal of Applied Physics. 82:902-904
A resonant tunneling emitter quantum mechanically coupled to a vacuum gap significantly increases the current level as compared to a Fowler–Nordheim field emitter. In addition, an almost monoenergetic distribution of the emitted electrons produces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a44f3ed6f016f539177603436f9440aa
https://doi.org/10.1063/1.365761
https://doi.org/10.1063/1.365761
Autor:
M Persi, Gennady Sh. Gildenblat
Publikováno v:
Solid-State Electronics. 38:1461-1463
We present a new version of the Pao-Sah double integration formula. A new formulation, while mathematically equivalent to the original one, increases the speed of computations by more than an order of magnitude. This reformulation of the Pao-Sah mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ea06733ee0678a21f836e8782303bd2
https://doi.org/10.1016/0038-1101(94)00271-g
https://doi.org/10.1016/0038-1101(94)00271-g
Autor:
Gennady Sh. Gildenblat
Publikováno v:
Journal of Applied Physics. 91:9883
Equations of the one-flux method are integrated to obtain the scattering matrix for a nonabsorbing barrier with an arbitrary potential profile. Earlier solutions for a field-free and uniform-field region are recovered as special cases of a general re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c03d77e70af084587aac0cad801b2a1
https://doi.org/10.1063/1.1477601
https://doi.org/10.1063/1.1477601
Publikováno v:
Solid-State Electronics. 32:717-726
A theory of monopolar space-charge-limited currents in insulator with exponential energy distribution of capture centers is developed without making any of the usual assumptions. In particular, the finite temperature form of the Fermi-Dirac statistic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8894ffe7849ea184f8e8a5f9dc04f7e4
https://doi.org/10.1016/0038-1101(89)90004-x
https://doi.org/10.1016/0038-1101(89)90004-x
Autor:
John Faricelli, Gennady Sh. Gildenblat
Publikováno v:
Solid-State Electronics. 30:655-662
With the advent of near and sub-micrometer scaled MOS devices, understanding the physics of substrate current generation has become more important. The results of extensive two-dimensional numerical simulation are presented in order to clarify the un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b449b38830c7f81f5818cfb584909aa1
https://doi.org/10.1016/0038-1101(87)90225-5
https://doi.org/10.1016/0038-1101(87)90225-5
Publikováno v:
Journal of Applied Physics. 61:1190-1196
A two‐step process for oxidation of silicon results in an improvement in thin silicon dioxide breakdown voltage distributions. This conclusion, previously demonstrated for approximately 8‐nm‐thick oxides, is shown to be valid for thicker oxides
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8705b2c5be53eae4c03c56bd2aaded92
https://doi.org/10.1063/1.338166
https://doi.org/10.1063/1.338166
