Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Gennadiy N. Kamaev"'
Autor:
Andrei A. Gismatulin, Gennadiy N. Kamaev, Vladimir N. Kruchinin, Vladimir A. Gritsenko, Oleg M. Orlov, Albert Chin
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract Nonstoichiometric silicon nitride SiN x is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compati
Externí odkaz:
https://doaj.org/article/fdf3fffcda49418daf39b1af82ad5d2e
Autor:
Ivan D. Yushkov, Gennadiy N. Kamaev, Vladimir A. Volodin, Pavel V. Geydt, Aleksandr V. Kapishnikov, Alexander M. Volodin
Publikováno v:
Micromachines, Vol 13, Iss 11, p 1917 (2022)
The memory (memristive) properties of an electride material based on polycrystalline mayenite (C12A7:e−) were studied. The phase composition of the material has been confirmed by such methods as XRD, TEM, Raman, and infrared spectroscopy. The elect
Externí odkaz:
https://doaj.org/article/9dc08741394d4a5c9715e17035a84fd8
Autor:
Anatoly V. Dvurechenskii, Aleksey V. Kacyuba, Gennadiy N. Kamaev, Vladimir A. Volodin, Zhanna V. Smagina
Publikováno v:
Nanomaterials, Vol 12, Iss 9, p 1407 (2022)
The radiation-induced phenomena of CaSi2 crystal growth were investigated, both directly during the epitaxial CaF2 growth on Si (111) and film irradiation with fast electrons on Si (111) after its formation, while maintaining the specified film thick
Externí odkaz:
https://doaj.org/article/27965e57901140d0a57708c5de494454
Publikováno v:
Electronics
Volume 12
Issue 3
Pages: 598
Volume 12
Issue 3
Pages: 598
A memristor is a new generation memory that merges dynamic random access memory and flash properties. In addition, it can be used in neuromorphic electronics. The advantage of silicon oxynitride, as an active memristor layer, over other dielectrics i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a50b5c146cdffe84ea366e50bf4c03d
Autor:
Maria I. Mironova, Aleksandr V. Kapishnikov, Ghaithaa A. Hamoud, Vladimir A. Volodin, Ivan A. Azarov, Ivan D. Yushkov, Gennadiy N. Kamaev, Evgeny A. Suprun, Nikita A. Chirikov, Nadim A. Davletkildeev, Alexey N. Baidakov, Vladimir S. Kovivchak, Larisa V. Baranova, Vladimir I. Strunin, Pavel V. Geydt
Publikováno v:
Coatings; Volume 13; Issue 2; Pages: 223
Composite thin films of the AlN–Al–V type, grown by magnetron sputtering, were analyzed by several complementary diagnostic methods. The power of the magnetron was used as a variable parameter, while gas flows, chamber pressure, and substrate tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50dbf79520a048b38bba8e08783fe931
Autor:
Gennadiy N. Kamaev, Vladimir N. Kruchinin, Oleg M. Orlov, Vladimir A. Gritsenko, A. A. Gismatulin, Albert Chin
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Scientific Reports
Scientific Reports
Nonstoichiometric silicon nitride SiNx is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34a32e20278fb272b5b9c565a83cba5c
https://doaj.org/article/fdf3fffcda49418daf39b1af82ad5d2e
https://doaj.org/article/fdf3fffcda49418daf39b1af82ad5d2e
Autor:
S. V. Rykhlitskii, Gennadiy N. Kamaev, Vladimir A. Gritsenko, Vladimir N. Kruchinin, Timofey V. Perevalov
Publikováno v:
Optics and Spectroscopy. 127:836-840
The optical properties of amorphous nonstoichiometric silicon oxide (SiOx) films of variable composition (x = 0.62–1.92) formed by plasma-enhanced chemical vapor deposition are studied in the spectral range of 1.12–4.96 eV. Spectral ellipsometry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14408ceac9f5319b468b6382b22e94a0
https://doi.org/10.1134/s0030400x19110183
https://doi.org/10.1134/s0030400x19110183
Autor:
Gennadiy N. Kamaev, Pavel Geydt, Ivan A. Azarov, A. A. Gismatulin, Igor P. Prosvirin, G. K. Krivyakin, Zhang Fan, Michel Vergnat, Vladimir A. Volodin
Publikováno v:
Electronics, Vol 9, Iss 2103, p 2103 (2020)
Electronics
Volume 9
Issue 12
Electronics
Volume 9
Issue 12
Metal&ndash
insulator&ndash
semiconductor (MIS) structures based on thin GeO[SiO2] and GeO[SiO] films on Si substrates were fabricated with indium-tin-oxide as a top electrode. The samples were divided it two series: one was left as deposit
insulator&ndash
semiconductor (MIS) structures based on thin GeO[SiO2] and GeO[SiO] films on Si substrates were fabricated with indium-tin-oxide as a top electrode. The samples were divided it two series: one was left as deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e949bcd3454b6d17db50f5895b29eac
https://www.mdpi.com/2079-9292/9/12/2103
https://www.mdpi.com/2079-9292/9/12/2103
Autor:
Andrei A, Gismatulin, Vitalii A, Voronkovskii, Gennadiy N, Kamaev, Yuriy N, Novikov, Vladimir N, Kruchinin, Grigory K, Krivyakin, Vladimir A, Gritsenko, Igor P, Prosvirin, Albert, Chin
Publikováno v:
Nanotechnology. 31(50)
THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::56a115383927d50380746f3af67b5dcd
https://pubmed.ncbi.nlm.nih.gov/33021224
https://pubmed.ncbi.nlm.nih.gov/33021224
Publikováno v:
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis.
The optical and structural properties of silicon irradiated with swift heavy Xe ions are investigated. In the photoluminescence (PL) spectra at low temperatures, a broad peak is observed in the range 1.3 - 1.5 μm. With an increase in the irradiation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::192cdb7b659fe5391f1eba01d2cc8f40
https://doi.org/10.29003/m1604.silicon-2020/215-217
https://doi.org/10.29003/m1604.silicon-2020/215-217