Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Genki Kono"'
Autor:
Daiji Yamashita, Masakazu Sugiyama, Kentaroh Watanabe, Genki Kono, Masahisa Fujino, Yoshiaki Nakano, Tadatomo Suga
Publikováno v:
2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (ICEP-IAAC).
Effect of ion species for fast atom beam (FAB) irradiation of surface activated bonding (SAB) of GaAs wafers was investigated by current-voltage (I–V) measurements and transmission electron microscopy (TEM) observations. Ne,Ar,Kr and Xe gases were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b22c7610decb5b1bacdfeac6a9386340
https://doi.org/10.1109/icep-iaac.2015.7111062
https://doi.org/10.1109/icep-iaac.2015.7111062
Autor:
Masakazu Sugiyama, Kentaroh Watanabe, Daiji Yamashita, Masahisa Fujino, Yoshiaki Nakano, Genki Kono, Tadatomo Suga
Publikováno v:
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
Ge/GaAs wafers have been bonded by surface activated bonding. TEM observation of the bonded interface shows that amorphous layer with thickness of about 5 nm has been formed. I-V characteristic of directly bonded p-Ge/p-GaAs shows diode-like properti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e30fe184f3d7392d0298d23f4b03f83c
https://doi.org/10.1109/ltb-3d.2014.6886189
https://doi.org/10.1109/ltb-3d.2014.6886189
Autor:
Masakazu Sugiyama, Masahisa Fujino, Tadatomo Suga, Daiji Yamashita, Genki Kono, Yoshiaki Nakano, Kentaroh Watanabe
Publikováno v:
2014 International Conference on Electronics Packaging (ICEP).
In this research, Ge/GaAs wafers were successfully bonded at room temperature by means of surface activated bonding (SAB) using fast atom beam (FAB) in high vacuum condition. Scanning acoustic microscope (SAM) observation shows wafers were bonded ove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66fd483bc24cbfe201fae0c0ad267a0f
https://doi.org/10.1109/icep.2014.6826774
https://doi.org/10.1109/icep.2014.6826774