Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Gengyu Yang"'
Publikováno v:
Applied Sciences, Vol 14, Iss 11, p 4579 (2024)
Ransomware is a type of malicious software that encrypts or locks user files and demands a high ransom. It has become a major threat to cyberspace security, especially as it continues to be developed and updated at exponential rates. Ransomware detec
Externí odkaz:
https://doaj.org/article/7e164f55d0e94727ad7fd4a5100dade4
Publikováno v:
IEEE Transactions on Power Systems. 38:514-527
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac8cc5ba86fdfb82e1230bb470240aef
https://doi.org/10.1109/tpwrs.2022.3161536
https://doi.org/10.1109/tpwrs.2022.3161536
Publikováno v:
International Journal of Electrical Power & Energy Systems. 135:107576
HVDC restart failure can cause the DC power interruption, which may further result in the transient power angle of the rectifier-side AC system to go unstable. Concerning this problem, a transient stability analysis method considering dynamic changes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac1125a9d71b75c52cf349e9ec22f8ba
https://doi.org/10.1016/j.ijepes.2021.107576
https://doi.org/10.1016/j.ijepes.2021.107576
Publikováno v:
International Journal of Electrical Power & Energy Systems. 119:105903
In view of the difficulty in balancing between selectivity and sensitivity of current protection in distribution networks integrated with electric vehicles, a regional current protection method applicable to distribution networks with large-scale ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5db35ecc23275d4a0f7945724ee3bdef
https://doi.org/10.1016/j.ijepes.2020.105903
https://doi.org/10.1016/j.ijepes.2020.105903
Publikováno v:
IEEE Transactions on Electron Devices. 59:2277-2280
Crossbar array architecture is usually used for the high-density integration of the RRAM device. However, the large sneak current in the passive crossbar array limits the increase in the integration density. In this brief, the bipolar TiN/TaOx/Pt RRA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76266a2edf343f66524ebad3d6064e8d
https://doi.org/10.1109/ted.2012.2201158
https://doi.org/10.1109/ted.2012.2201158
Autor:
Yimao Cai, Gengyu Yang, Lijie Zhang, Yu Tang, Ru Huang, Yinglong Huang, Yue Pan, Jun Mao, Sheng H. Tan
Publikováno v:
ECS Transactions. 44:79-85
In this paper, a TiN/TaOx/Pt MIM device featuring multi-function characteristics has been successfully fabricated. This device exhibits excellent bipolar resistive random access memory (RRAM) characteristics including low switching voltages, fast swi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bde5ea9ce28622b3dccefae02ee3d8b
https://doi.org/10.1149/1.3694299
https://doi.org/10.1149/1.3694299
Publikováno v:
Procedia Engineering; Apr2012, Vol. 26, p1322-1329, 8p
Publikováno v:
Procedia Engineering; Apr2012, Vol. 26, p1305-1313, 9p
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