Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Geng-Ying Liau"'
Autor:
Geng-Ying Liau, 廖耕瑩
98
Sb-based materials are considered to be high potential for high-speed logic and digital electronics due to their highest electron and hole mobilities among all III-V compounds. Added by their low-power consumption, complementary circuit devic
Sb-based materials are considered to be high potential for high-speed logic and digital electronics due to their highest electron and hole mobilities among all III-V compounds. Added by their low-power consumption, complementary circuit devic
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/01442453999069630430
Autor:
Geng-Ying Liau, H.-K. Lin, Clement Hsingjen Wann, Han-Chieh Ho, Pei-Chin Chiu, Wen-Chin Lee, Ta-Ming Kuan, Chih-Hsin Ko, Jen-Inn Chyi, Meng-Kuei Hsieh
Publikováno v:
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM).
Antimonide-based heterostructural p-channel HFET epitaxies consisting of an In 0.44 Ga 0.56 Sb quantum well located between AlSb barriers were developed by molecular beam epitaxy. The In 0.44 Ga 0.56 Sb channel layer was compressively strained to enh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1df5b14e6f69715a17b5f53c51640f28
https://doi.org/10.1109/iciprm.2010.5516381
https://doi.org/10.1109/iciprm.2010.5516381
Autor:
H.-K. Lin, Jen-Inn Chyi, Geng-Ying Liau, Wen-Chin Lee, Meng-Kuei Hsieh, Chih-Hsin Ko, Han-Chieh Ho, Ta-Wei Fan, Ta-Ming Kuan, Pei-Chin Chiu, Clement Hsingjen Wann
Publikováno v:
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM).
Small-bandgap InAs channel materials are potential candidates for high-speed and low-power applications and have been demonstrated in AlSb/InAs/AlSb QWFETs. Taking advantage of their excellent transport properties, we successfully develop an InAs-cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57d4f8a03bb1260895c69d3fe42e5841
https://doi.org/10.1109/iciprm.2010.5516253
https://doi.org/10.1109/iciprm.2010.5516253
Autor:
Han-Chieh Ho, Ta-Wei Fan, Geng-Ying Liau, Heng-Kuang Lin, Pei-Chin Chiu, Jen-Inn Chyi, Chih-Hsin Ko, Ta-Ming Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, Wann, C.H.
Publikováno v:
2010 International Conference on Indium Phosphide & Related Materials (IPRM); 2010, p1-4, 4p