Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Geng-Ming Hsu"'
Autor:
Geng-Ming Hsu, 許耿銘
93
For the first time, one dimensional InN nano-tips were fabricated with gold as the catalyst using metal organic chemical vapor deposition. The morphology dependence of nano-tips on substrate temperature, pressure, and gas flow rate was invest
For the first time, one dimensional InN nano-tips were fabricated with gold as the catalyst using metal organic chemical vapor deposition. The morphology dependence of nano-tips on substrate temperature, pressure, and gas flow rate was invest
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/36051512941236588769
Autor:
Chien Ting Wu, Kuei-Hsien Chen, Yang-Fang Chen, Chia Chun Chen, Hsu Chih-Wei, Abhijit Ganguly, Li-Chyong Chen, Yu Ting Hung, Geng Ming Hsu, Chi Hui Liang
Publikováno v:
Advanced Functional Materials. 18:938-942
We report the structure and emission properties of ternary (In,Ga)N nanowires (NWs) embedded with self-assembled quantum dots (SAQDs). InGaN NWs are fabricated by the reaction of In, Ga and NH 3 via a vapor-liquid-solid (VLS) mechanism, using Au as t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11d55e8ba47e3e9e0c3545e40135b0c6
https://doi.org/10.1002/adfm.200700739
https://doi.org/10.1002/adfm.200700739
Autor:
Li-Chyong Chen, Kuei-Hsien Chen, Chia Ju Yu, Yang-Fang Chen, Szu Ping Fu, Geng Ming Hsu, Miin Jang Chen, T T Chen
Publikováno v:
Advanced Materials. 19:4524-4529
In the past few years InN, the least understood Group III nitride compound, has attracted a great deal of interest because of its unique properties, making it suitable for applications in various electronic and optoelectronic devices. [1–8] In addi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3abb07b21884db80c005f1d0371507da
https://doi.org/10.1002/adma.200701246
https://doi.org/10.1002/adma.200701246
Autor:
Erik Janzén, Hsu Cheng Hsu, Kuei-Hsien Chen, Urban Forsberg, Li-Chyong Chen, Anders Lundskog, Yu Shiung Lai, Geng Ming Hsu, Shuo Yen Tseng, Zhe Chuan Feng
Raman scattering of individual aluminum nitride (AlN) nanowires is investigated systematically. The axial direction of single nanowire can be rapidly verified by polarized Raman scattering. The angular dependencies of E-2(high) mode show strongly ani
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::455a252e049f9488f23bb420fe2f90f3
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-85091
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-85091
Autor:
Geng Ming Hsu, Li-Chyong Chen, Wen Hsun Tu, Antonio M. Basilio, Jih Shang Hwang, Chien Cheng Li, Yan-Gu Lin, Tai Yan Liu, S. B. Wang, Yu-Kuei Hsu, Kuei-Hsien Chen, Surjit Chattopadhyay, Hsin-Yi Chen, Han Wei Chen
Publikováno v:
Nanotechnology. 24:055401
Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5da62fc80bde172bd78ca1fbb4f68920
https://doi.org/10.1088/0957-4484/24/5/055401
https://doi.org/10.1088/0957-4484/24/5/055401
Autor:
Yieu Chyan, Cheng-Hsuing Yen, Geng-Ming Hsu, Yu-Kuei Hsu, Antonio M. Basilio, Yit-Tsong Chen, Kuei-Hsien Chen, Li-Chyong Chen, Oliver Chyan, Jih Shang Hwang, Wen-Hsun Tu
Publikováno v:
Journal of Materials Chemistry. 20:8118
Using a simple and inexpensive crystallographic etching technique on a GaN thin film, the energy photoconversion efficiency was increased by 100%. Prior to etching, the thin film's solar-to-hydrogen conversion efficiency at the applied bias of 0.5 V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::030f42f36e8af9d26a9d07595bc6d979
https://doi.org/10.1039/c0jm00704h
https://doi.org/10.1039/c0jm00704h
Autor:
Hsu Cheng Hsu, Per-Olof Holtz, Chien Ting Wu, Andreas Gällström, Ching-Lien Hsiao, Wen Yu Shiao, Chih-Chung Yang, Kuei-Hsien Chen, Li-Chyong Chen, Chia Chun Chen, Ting-Wei Liu, Geng Ming Hsu
Publikováno v:
Applied Physics Letters. 92:111914
High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r -plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9c64cae828c753b7db55f3da3827529
https://doi.org/10.1063/1.2898214
https://doi.org/10.1063/1.2898214
Autor:
Geng Ming Hsu, Hsu Cheng Hsu, Ming Shien Hu, Jih Shang Hwang, Li-Chyong Chen, Kuei-Hsien Chen, Chia Ju Yu, Lu-Sheng Hong, Yang-Fang Chen
Publikováno v:
Applied Physics Letters. 90:123109
Infrared lasing from single-crystalline InN nanobelts grown by metal organic chemical vapor deposition was demonstrated. Transmission electron microscopy studies revealed that the InN nanobelts of rectangular cross section grew along [110] direction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::159f92f55cf2c9c610b98a39091cf9b9
https://doi.org/10.1063/1.2714291
https://doi.org/10.1063/1.2714291
Autor:
Li-Chyong Chen, Kuei-Hsien Chen, Jih Shang Hwang, Geng Ming Hsu, Shih Chen Shi, Chia-Fu Chen, Zon Huang Lan, Surojit Chattopadhyay
Publikováno v:
Applied Physics Letters. 87:203103
We report metalorganic chemical vapor deposition of indium nitride (InN) nanotips with apex angles of 10° and length and base diameter of around 1μm and 200 nm, respectively. The structure of the hexagonal InN nanotips growing along [002] was studi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::157d198cdf8d802b66647aa6c1768c88
https://doi.org/10.1063/1.2128484
https://doi.org/10.1063/1.2128484
Autor:
Jih-Shang Hwang, Tai-Yan Liu, Chattopadhyay, Surjit, Geng-Ming Hsu, Basilio, Antonio M,, Han-Wei Chen, Yu-Kuei Hsu, Wen-Hsun Tu, Yan-Gu Lin, Kuei-Hsien Chen, Chien-Cheng Li, Sheng-BoWang, Hsin-Yi Chen, Li-Chyong Chen
Publikováno v:
Nanotechnology; 2013, Vol. 24 Issue 5, p1-10, 10p